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参数资料
| 型号： | AT-32011-TR2G |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-4 |
| 文件页数： | 1/10页 |
| 文件大小： | 279K |
| 代理商： | AT-32011-TR2G |
AT-32011, AT-32033
Low Current, High Performance NPN
Silicon Bipolar Transistor
Data Sheet
Description
Avago’s AT-32011 and AT-32033 are high performance
NPN bipolar transistors that have been optimized for
maximum ft at low voltage operation, making them ideal
for use in battery powered applications in wireless mar-
kets. The AT-32033 uses the 3 lead SOT-23, while the AT-
32011 places the same die in the higher performance 4
lead SOT-143. Both packages are industry standard, and
compatible with high volume surface mount assembly
techniques.
The 3.2 micron emitter-to-emitter pitch and reduced
parasitic design of these transistors yields extremely high
performance products that can perform a multiplicity
of tasks. The 20 emitter finger interdigitated geometry
yields an easy to match to and extremely fast transistor
with moderate power, low noise resistance, and low op-
erating currents.
Optimized performance at 2.7 V makes these devices
ideal for use in 900 MHz, 1.8 GHz, and 2.4 GHz battery
operated systems as an LNA, gain stage, buffer, oscilla-
tor, or active mixer. Typical amplifier designs at 900 MHz
yield 1.2 dB noise figures with 12 dB or more associated
gain at a 2.7 V, 2 mA bias, with noise performance being
relatively insensitive to input match. High gain capabil-
ity at 1 V, 1 mA makes these devices a good fit for 900
MHz pager applications. Voltage breakdowns are high
enough for use at 5 volts.
The AT-3 series bipolar transistors are fabricated using
an optimized version of Avago’s 10 GHz ft, 30 GHz fMAX
Self-Aligned-Transistor (SAT) process. The die are nitride
passivated for surface protection. Excellent device uni-
formity, performance and reliability are produced by the
use of ion-implantation, self-alignment techniques, and
gold metalization in the fabrication of these devices.
Features
High Performance Bipolar Transistor Optimized for
Low Current, Low Voltage Operation
900 MHz Performance:
AT-32011: 1 dB NF, 14 dB GA
AT-32033: 1 dB NF, 12.5 dB GA
Characterized for End-Of-Life Battery Use (2.7 V)
SOT-23 and SOT-143 SMT Plastic Packages
Tape-And-Reel Packaging Option Available
Lead-free
Pin Connections and Package Marking
Notes:
Top View. Package Marking provides orientation and identification.
"x" is the date code.
BASE
EMITTER
EMITTER COLLECTOR
BASE
EMITTER
COLLECTOR
320x
SOT-23 (AT-32033)
SOT-143 (AT-32011)
Note:
Top view. Package marking provides orientation
and identification. "x" is the date code.
相关PDF资料 |
PDF描述 |
|---|---|
| AT-32011-TR1G | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-32033-TR1G | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-32033-TR1 | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-32011-BLK | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-32033-BLK | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT320240Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:李守华 15889415469 |
| AT-320240Q1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:AT-320240Q1 320 X 240 DOTS 1/240 DUTY |
| AT-320240Q5FIQW | 制造商:ZETTLER 制造商全称:ZETTLER Electronics 功能描述:SPECIFICATIONS FOR LCD MODULE |
| AT-320240Q6FIQW | 制造商:ZETTLER 制造商全称:ZETTLER Electronics 功能描述:SPECIFICATIONS FOR LCD MODULE |
| AT32032 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:AT32032 |
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