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参数资料
型号： AT-32033-TR2
厂商： AGILENT TECHNOLOGIES INC
元件分类： 小信号晶体管
英文描述： S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封装： PLASTIC, SMT, 3 PIN
文件页数： 6/11页
文件大小： 112K
代理商： AT-32033-TR2
4
Ga
(dBm)
-50
0
TEMPERATURE (°C)
50
25
10
5
0
100
15
20
0
2.5
1.0
0.5
1.5
2.0
NOISE
FIGURE
(dB)
Ga
NF
Ga
(dBm)
-50
0
TEMPERATURE (°C)
50
25
10
5
0
100
15
20
0
2.5
1.0
0.5
1.5
2.0
NOISE
FIGURE
(dB)
Ga
NF
IP3
(dBm)
0
FREQUENCY (MHz)
1.0
1.5
25
10
5
0.5
2.5
15
2.0
20
2 mA
5 mA
10 mA
20 mA
Figure 14. AT-32011 Noise Figure and
Associated Gain at VCE = 2.7 V,
IC = 2 mA vs. Temperature in Test
Circuit, Figure 1. (Circuit Losses
De-embedded).
Figure 15. AT-32033 Noise Figure and
Associated Gain at VCE = 2.7 V,
IC = 2 mA vs. Temperature in Test
Circuit, Figure 1. (Circuit Losses
De-embedded).
Figure 16. AT-32011 and AT-32033
Third Order Intercept vs. Frequency
and Bias at VCE = 2.7 V, with Optimal
Tuning.
P
1dB
(dBm)
0
-5
FREQUENCY (GHz)
1.0
1.5
10
0
-2.5
0.5
2.5
2.0
7.5
2 mA
5 mA
5
G
1dB
(dB)
0
FREQUENCY (GHz)
1.0
1.5
20
10
5
0.5
2.5
15
2.0
2 mA
5 mA
G
1dB
(dB)
0
FREQUENCY (GHz)
1.0
1.5
20
10
5
0.5
2.5
15
2.0
2 mA
5 mA
Figure 11. AT-32011 and AT-32033
Power at 1 dB Gain Compression vs.
Frequency and Current at VCE = 1 V.
Figure 12. AT-32011 1 dB Compressed
Gain vs. Frequency and Current at
VCE = 1 V.
Figure 13. AT-32033 1 dB Compressed
Gain vs. Frequency and Current at
VCE = 1 V.
Figure 8. AT-32011 and AT-32033
Power at 1 dB Gain Compression vs.
Frequency and Current at VCE = 5 V.
Figure 9. AT-32011 1 dB Compressed
Gain vs. Frequency and Current at
VCE = 5 V.
Figure 10. AT-32033 1 dB Compressed
Gain vs. Frequency and Current at
VCE = 5 V.
P
1dB
(dBm)
0
-5
FREQUENCY (GHz)
1.0
1.5
20
5
0
0.5
2.5
10
2.0
15
2 mA
5 mA
10 mA
20 mA
G
1dB
(dB)
0
FREQUENCY (GHz)
1.0
1.5
20
10
5
0.5
2.5
15
2.0
2 mA
5 mA
10 mA
20 mA
G
1dB
(dB)
0
FREQUENCY (GHz)
1.0
1.5
20
10
5
0.5
2.5
15
2.0
2 mA
5 mA
10 mA
20 mA
AT-32011, AT-32033 Typical Performance
相关PDF资料
PDF描述
AT-32011-BLKG S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
AT-38043-TR1 L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
AT-38043-BLK L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
AT-38043-TR2 L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
AT-41511-BLK UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
AT-32033-TR2G 功能描述:射频双极小信号晶体管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel
AT32063 制造商:AGILENT 制造商全称:AGILENT 功能描述:???d???A??????NPN?g?????W?X?^ ?c?C???E?^?C?vSOT-363?p?b?P?[?W
AT-32063 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Current, High Performance NPN Silicon Bipolar Transistor
AT-32063-BLK 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Current, High Performance NPN Silicon Bipolar Transistor
AT-32063-BLKG 功能描述:射频双极小信号晶体管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel
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