参数资料
型号: AT-33225-BLK
厂商: AGILENT TECHNOLOGIES INC
元件分类: 小信号晶体管
英文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封装: PLASTIC, MSOP-4
文件页数: 3/10页
文件大小: 117K
代理商: AT-33225-BLK
4-72
AT-33225 Absolute Maximum Ratings
Absolute
Symbol
Parameter
Units
Maximum[1]
V
EBO
Emitter-Base Voltage
V
1.4
V
CBO
Collector-Base Voltage
V
16.0
V
CEO
Collector-Emitter Voltage
V
9.5
I
C
Collector Current
mA
640
P
T
Power Dissipation [2]
W
1.6
T
j
Junction Temperature
°C
150
T
STG
Storage Temperature
°C
-65 to 150
Thermal Resistance[3]:
θjc =40°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. Derate at 25 mW/
°C for T
C > 85°C.
Tc is defined to be the temperature
of the collector pin 4, where the
lead contacts the circuit board.
3. Using the liquid crystal technique,
VCE= 4.5V,Ic =100mA,Tj =150°C,
1- 2
m“hot-spot”resolution.
Electrical Specifications, T
C = 25°C
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
Freq. = 900 MHz, V
CE = 4.8 V, ICQ = 6 mA, CW operation, Test Circuit A,
unless otherwise specified
P
out
Output Power[1]
Pin = +22 dBm
dBm
+30.0
+31.0
η
C
Collector Efficiency[1]
Pin = +22 dBm
%
60
70
IMD3
3rd Order Intermodulation Distortion, 2 Tone Test,
F1 = 899 MHz
dBc
-29
Pout each Tone = +24 dBm
[1]
F2 = 901 MHz
Mismatch Tolerance, No Damage[1]
Pout = +31 dBm
7:1
any phase, 2 sec duration
BV
EBO
Emitter-Base Breakdown Voltage
I
E = 0.4 mA, open collector
V
1.4
BV
CBO
Collector-Base Breakdown Voltage
I
C = 2.0 mA, open emitter
V
16.0
BV
CEO
Collector-Emitter Breakdown Voltage
I
C = 10.0 mA, open base
V
9.5
h
FE
Forward Current Transfer Ratio
V
CE = 3 V, IC = 180 mA
80
150
330
I
CEO
Collector Leakage Current
V
CEO = 5 V
A30
Note:
1. With external matching on input and output, tested in a 50 ohm environment. Refer to Test Circuit A (ETACS/ISM).
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AT-36408-BLK 1.7 A, 9.5 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
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