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参数资料
| 型号： | AT-36408-BLK |
| 厂商： | AGILENT TECHNOLOGIES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC, SOIC-8 |
| 文件页数： | 2/8页 |
| 文件大小： | 102K |
| 代理商： | AT-36408-BLK |
4-82
AT-36408 Absolute Maximum Ratings
Absolute
Symbol
Parameter
Units
Maximum[1]
V
EBO
Emitter-Base Voltage
V
1.4
V
CBO
Collector-Base Voltage
V
16.0
V
CEO
Collector-Emitter Voltage
V
9.5
I
C
Collector Current[2]
A
1.7
P
T
Peak Power Dissipation [2, 3]
W
8.6
T
j
Junction Temperature
°C
150
T
STG
Storage Temperature
°C
-65 to 150
Thermal Resistance[4]:
θjc =60°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. Pulsed operation, pulse width = 577
sec,dutycycle = 12.5%.
3. Derate at 133.3 mW/
°C for T
C > 85 °C. T
C is defined to be the temperature of
the collector pins 3 and 6, where the lead contacts the circuit board.
4. Using the liquid crystal technique, VCE= 4.5 V, Ic =100 mA, Tj =150°C, 1- 2 m
“hot-spot” resolution.
Electrical Specifications, T
C = 25°C
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
Freq. = 900 MHz, V
CE = 4.8 V, I
CQ = 50 mA, pulsed operation, pulse width =
577
sec, duty cycle = 12.5%, Test Circuit A,unless otherwise specified
P
out
Output Power[1]
Pin = +26 dBm
dBm
+34.0
+35.0
η
C
Collector Efficiency[1]
Pin = +26 dBm
%
55
65
H2
2nd Harmonic[1]
F0 = 900 MHz
dBc
-50
H3
3rd Harmonic[1]
F0 = 900 MHz
dBc
-40
Mismatch Tolerance, No Damage[1]
Pout = +35 dBm
7:1
any phase, 2 sec duration
BV
EBO
Emitter-Base Breakdown Voltage
I
E = 0.8 mA, open collector
V
1.4
BV
CBO
Collector-Base Breakdown Voltage
I
C = 4.0 mA, open emitter
V
16.0
BV
CEO
Collector-Emitter Breakdown Voltage
I
C = 20.0 mA, open base
V
9.5
h
FE
Forward Current Transfer Ratio
V
CE = 3 V, IC = 180 mA
—
80
150
330
I
CEO
Collector Leakage Current
V
CEO = 5 V
A50
Note:
1. With external matching on input and output, tested in a 50 ohm environment. Refer to Test Circuit A (GSM).
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