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参数资料
| 型号： | AT-41435 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | CERAMIC, 35, MICRO-X-4 |
| 文件页数： | 1/5页 |
| 文件大小： | 71K |
| 代理商： | AT-41435 |
Agilent AT-41435
Up to 6 GHz Low Noise
Silicon Bipolar Transistor
Data Sheet
Features
Low Noise Figure:
1.7 dB Typical at 2.0 GHz
3.0 dB Typical at 4.0 GHz
High Associated Gain:
14.0 dB Typical at 2.0 GHz
10.0 dB Typical at 4.0 GHz
High Gain-Bandwidth
Product:
8.0 GHz Typical fT
Cost Effective Ceramic
Microstrip Package
Lead-free Option Available
35 micro-X Package
Description
Agilent’s AT-41435 is a general
purpose NPN bipolar transistor
that offers excellent high
frequency performance. The
AT-41435 is housed in a cost
effective surface mount 100 mil
micro-X package. The 4 micron
emitter-to-emitter pitch enables
this transistor to be used in many
different functions. The 14 emitter
finger interdigitated geometry
yields an intermediate sized
transistor with impedances that
are easy to match for low noise
and moderate power applications.
This device is designed for use in
low noise, wideband amplifier,
mixer and oscillator applications
in the VHF, UHF, and microwave
frequencies. An optimum noise
match near 50
at 1 GHz, makes
this device easy to use as a low
noise amplifier.
The AT-41435 bipolar transistor is
fabricated using Agilent’s 10 GHz
fT Self-Aligned-Transistor (SAT)
process. The die is nitride passi-
vated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
相关PDF资料 |
PDF描述 |
|---|---|
| AT-41435G | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-41435 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-41486-BLK | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-41486-TR1 | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-41486-TR1G | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT41435-3 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 60MA I(C) | MICRO-X |
| AT41435-5 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 60MA I(C) | MICRO-X |
| AT-41435G | 功能描述:射频双极小信号晶体管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| AT4144 | 功能描述:开关配件 CENTER DIVIDER RoHS:否 制造商:C&K Components 类型:Cap 用于:Pushbutton Switches 设计目的: |
| AT4145 | 功能描述:开关配件 SQUARE DUST COVER FOR UB2 RoHS:否 制造商:C&K Components 类型:Cap 用于:Pushbutton Switches 设计目的: |
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