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参数资料
| 型号： | AT-41511-TR2 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC, SMT, 4 PIN |
| 文件页数： | 4/11页 |
| 文件大小： | 112K |
| 代理商： | AT-41511-TR2 |
2
Characterization Information, TA = 25°C
AT-41511 AT-41533
Symbol
Parameters and Test Conditions
Units
Min
Typ Min
Typ
NF
Noise Figure
f = 0.9 GHz
dB
1.0
VCE = 5 V, IC = 5 mA
f = 2.4 GHz
1.7
1.6
GA
Associated Gain
f = 0.9 GHz
dB
15.5
14.5
VCE = 5 V, IC = 5 mA
f = 2.4 GHz
11
9
P1dB
Power at 1 dB Gain Compression (opt tuning)
f = 0.9 GHz
dBm
14.5
VCE = 5 V, IC = 25 mA
G1dB
Gain at 1 dB Gain Compression (opt tuning)
f = 0.9 GHz
dB
17.5
14.5
VCE = 5 V, IC = 25 mA
IP3
Output Third Order Intercept Point,
f = 0.9 GHz
dBm
25
VCE = 5 V, IC =25 mA (opt tuning)
|S21E|2
Gain in 50
system; V
CE = 5 V, IC = 5 mA
f = 0.9 GHz
dB
13.5
15.5
10.8
12.8
f = 2.4 GHz
7.9
5.2
AT-41511, AT-41533 Absolute Maximum Ratings
Absolute
Symbol
Parameter
Units
Maximum[1]
VEBO
Emitter-Base Voltage
V
1.5
VCBO
Collector-Base Voltage
V
20
VCEO
Collector-Emitter Voltage
V
12
IC
Collector Current
mA
50
PT
Power Dissipation[2,3]
mW
225
Tj
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to 150
Electrical Specifications, TA = 25°C
AT-41511
AT-41533
Symbol
Parameters and Test Conditions
Units Min
Typ
Max
Min
Typ
Max
hFE
Forward Current Transfer Ratio
VCE = 5 V
-
30
150
270
30
150
270
IC = 5 mA
ICBO
Collector Cutoff Current
VCB = 3 V
A
0.2
IEBO
Emitter Cutoff Current
VEB = 1 V
A
1.0
Notes:
1. Operation of this device above any one
of these parameters may cause
permanent damage.
2. TMounting Surface = 25°C.
3. Derate at 1.82 mW/
°C for T
C > 26°C.
Thermal Resistance:[2]
θ
jc =550
°C/W
相关PDF资料 |
PDF描述 |
|---|---|
| AT-41533-TR1 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-41532-BLK | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-41532-TR2 | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-41532-TR1 | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-41532-TR2 | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT-41511-TR2G | 功能描述:射频双极小信号晶体管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| AT4151A | 功能描述:开关配件 .450" WIDE BLK PADDL CAP FOR M & M2T RoHS:否 制造商:C&K Components 类型:Cap 用于:Pushbutton Switches 设计目的: |
| AT4151B | 制造商:NKK Switches 功能描述:PADDLE CAP |
| AT4151C | 功能描述:开关配件 .450" WIDE RED PADDL CAP FOR M & M2T RoHS:否 制造商:C&K Components 类型:Cap 用于:Pushbutton Switches 设计目的: |
| AT4151E | 制造商:NKK Switches 功能描述:PADDLE CAP |
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