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参数资料
| 型号： | AT-41533-BLKG |
| 厂商： | AGILENT TECHNOLOGIES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC, SMT, 3 PIN |
| 文件页数： | 1/10页 |
| 文件大小： | 103K |
| 代理商： | AT-41533-BLKG |
4-134
General Purpose, Low Noise
NPN Silicon Bipolar Transistor
Technical Data
Features
General Purpose NPN
Bipolar Transistor
900 MHz Performance:
AT-41511: 1 dB NF, 15.5 dB GA
AT-41533: 1 dB NF, 14.5 dB GA
Characterized for 3, 5, and
8 Volt Use
SOT-23 and SOT-143 SMT
Plastic Packages
Tape-and-Reel Packaging
Option Available[1]
Description
Hewlett-Packard’s AT-41511 and
AT-41533 are general purpose
NPN bipolar transistors that offer
excellent high frequency
performance at an economical
price. The AT-41533 uses the
3 lead SOT-23, while the AT-415 11
places the same die in the lower
parasitic 4 lead SOT-143. Both
packages are industry standard,
and compatible with high volume
surface mount assembly
techniques.
The 4 micron emitter-to-emitter
pitch of these transistors yields
high performance products that
can perform a multiplicity of
tasks. The 14 emitter finger
interdigitated geometry yields an
intermediate-sized transistor with
easy to match to impedances, low
noise figure, and moderate
power.
Optimized for best performace
from a 5 to 8 volt bias supply,
these transistors are also good
performers at 2.7 V. Applications
include use in wireless systems as
an LNA, gain stage, buffer,
oscillator, or active mixer.
An optimum noise match near
50 ohms at 900 MHz makes these
devices particularly easy to use as
LNAs. Typical amplifier designs
at 900 MHz yield 1 dB noise
figures with 15 dB or more
associated gain at a 5 V, 5 mA
bias, with good gain and noise
figure obtainable at biases as low
as 2 mA.
The AT-415 series bipolar
transistors are fabricated using
Hewlett-Packard’s 10 GHz fT Self-
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by
the use of ion-implantation, self-
alignment techniques, and gold
metalization in the fabrication of
these devices.
AT-41511
AT-41533
1. Refer to “Tape-and-Reel Packaging for
Semiconductor Devices.”
BASE
EMITTER
EMITTER COLLECTOR
BASE
EMITTER
COLLECTOR
415
SOT 23 (AT-41533)
SOT 143 (AT-41511)
Outline Drawing
5965-8929E
相关PDF资料 |
PDF描述 |
|---|---|
| AT-41533-TR1 | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-41511-TR1G | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-41511-BLK | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-41533-BLK | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-41511-BLK | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT-41533-BLKG | 制造商:Avago Technologies 功能描述:RF BIPOLAR TRANSISTOR |
| AT-41533-TR1 | 功能描述:IC TRANS NPN GP BIPOLAR SOT-23 RoHS:否 类别:分离式半导体产品 >> RF 晶体管 (BJT) 系列:- 产品变化通告:Product Discontinuation 17/Dec/2010 标准包装:1 系列:- 晶体管类型:NPN 电压 - 集电极发射极击穿（最大）:4.7V 频率 - 转换:47GHz 噪声系数（dB典型值@频率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 时的最小直流电流增益 (hFE):160 @ 25mA，3V 电流 - 集电极 (Ic)（最大）:45mA 安装类型:表面贴装 封装/外壳:4-SMD，扁平引线 供应商设备封装:4-TSFP 包装:Digi-Reel® 其它名称:BFP 740FESD E6327DKR |
| AT-41533-TR1G | 功能描述:射频双极小信号晶体管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| AT-41533-TR2G | 功能描述:射频双极小信号晶体管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| AT-41535 | 制造商:AVAGO 制造商全称:AVAGO TECHNOLOGIES LIMITED 功能描述:Up to 6 GHz Low Noise Silicon Bipolar Transistor |
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