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参数资料
| 型号： | AT-41586-BLK |
| 厂商： | AGILENT TECHNOLOGIES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件页数： | 1/5页 |
| 文件大小： | 72K |
| 代理商： | AT-41586-BLK |
4-144
Low Cost General Purpose
Transistors
Technical Data
Features
Low Noise Figure
1.4 dB Typical at 1 GHz
1.7 dB Typical at 2 GHz
High Associated Gain
17.0 dB Typical at 1 GHz
12.5 dB Typical at 2 GHz
Low Cost Surface Mount
Package
Tape and Reel Option
Available
AT-41586
Figure 1. AT-41586 Noise Figure and
Associated Gain vs. Frequency at
VCE = 8 V, IC = 10 mA.
FREQUENCY (GHz)
4.0
1.0
6
0
24
21
3
15
18
0.5
12
9
3.0
2.0
2
4
0
G
(dB)
A
O
NF
(dB)
GA
O
NF
1
4
3
2
EMITTER
BASE
EMITTER
COLLECTOR
86PlasticPackage
Description
Hewlett-Packard’s AT-41586 is a
general purpose NPN bipolar
transistor that offers excellent
high frequency performance. The
AT-41586 is housed in a low cost
surface mount .085" diameter
plastic package. The 4 micron
emitter-to-emitter pitch enables
this transistor to be used in many
different functions. The 14 emitter
finger interdigitated geometry
yields an intermediate sized
transistor with impedances that
are easy to match for low noise
and moderate power applications.
Applications include use in
wireless systems as an LNA, gain
stage, buffer, oscillator, and
mixer. An optimum noise match
near 50
in the 1 to 2 GHz
frequency range, makes this
device easy to use as a low noise
amplifier.
The AT-41586 bipolar transistor is
fabricated using Hewlett-Packard’s
10 GHz f
T Self-Aligned-Transistor
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
PinConnections
5965-8908E
415
相关PDF资料 |
PDF描述 |
|---|---|
| AT-41586-TR1G | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-41586-TR1 | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-41586-BLK | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-41586-TR1 | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-41586-TR2G | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT-41586-BLKG | 功能描述:射频双极小信号晶体管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| AT-41586-TR1 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Cost General Purpose Transistors |
| AT-41586-TR1G | 功能描述:射频双极小信号晶体管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| AT-41586-TR2G | 功能描述:射频双极小信号晶体管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| AT4158JC | 功能描述:开关配件 SQ CLR/RED CAP LED RoHS:否 制造商:C&K Components 类型:Cap 用于:Pushbutton Switches 设计目的: |
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