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参数资料
| 型号： | AT-41586-TR2G |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | LEAD FREE, PLASTIC, 86, 4 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 134K |
| 代理商： | AT-41586-TR2G |
2
AT-41586 Absolute Maximum Ratings[1]
Absolute
Symbol
Parameter
Units
Maximum[1]
VEBO
Emitter-BaseVoltage
V
1.5
VCBO
Collector-BaseVoltage
V
20
VCEO
Collector-EmitterVoltage
V
12
IC
CollectorCurrent
mA
60
PT
PowerDissipation[2]
mW
500
Tj
JunctionTemperature
°C
150
TSTG
StorageTemperature
°C
-65to150
Notes:
1.Operationofthisdeviceaboveanyoneoftheseparametersmaycausepermanentdamage.
2.TCASE=25°C.
3.SeeMEASUREMENTSsection,“ThermalResistance,”formoreinformation.
Electrical Specifications, TA = 25°C, VCE=8V
Symbol
Parameters and Test Conditions
Unit
Min.
Typ.
Max.
NFo
OptimumNoiseFigure:IC=10mA
f=1.0GHz
dB
1.4
f=2.0GHz
1.7
f=4.0GHz
3.0
GA
Gain@NF0:IC=10mA
f=1.0GHz
dB
17.0
f=2.0GHz
12.5
f=4.0GHz
8.0
|S21E|2
InsertionPowerGain:IC=25mA
f=1.0GHz
dB
17.0
f=2.0GHz
11.0
P1dB
PowerOutput@1dBGainCompression:IC=25mA
f=2.0GHz dBm
18.0
G1dB
1dBCompressedGain:IC=25mA
f=2.0GHz
dB
13.0
fT
GainBandwidthProduct:IC=25mA
GHz
8.0
hFE
ForwardCurrentTransferRatio:IC=10mA
30
150
270
ICBO
CollectorCutoffCurrent:VCB=8V
A
0.2
IEBO
EmitterCutoffCurrent:VEB=1V
A
1.0
Thermal Resistance:[3]
θjc=165°C/W
Note:
1.Formoreinformationonoutlines86,referto“TapeandReelPackagingforSurfaceMountDevices.”
Figure 2. AT-41586 Optimum Noise Figure and
Associated Gain vs. Collector Current at VCE = 8
V, f = 2.0 GHz.
Figure 3. AT-41586 P1dB and G1dB vs. Collector
Current at VCE = 8 V, f = 2.0 GHz.
Figure 4. AT-41586 Insertion Power Gain vs. Col-
lector Current and Frequency at 25°C, VCE = 8 V.
10
20
I (mA)
C
10
16
12
14
0
3
0
2
4
0
O
NF
(d
B)
G
(d
B)
A
G A
O
NF
30
12
0
20
8
16
10
20
COLLECTOR CURRENT
40
GA
IN
(d
B)
4
P 1dB
G 1dB
1 8
14
10
6
2
30
10
0
20
5
1 5
5
1 0
I (mA)
C
0
2
5
40
4.0 GHz
2.0 GHz
1.0 GHz
|S
|
(d
B)2
21
E
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