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参数资料
| 型号： | AT-42000-GP4 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | DIE-2 |
| 文件页数： | 1/5页 |
| 文件大小： | 168K |
| 代理商： | AT-42000-GP4 |
AT-42000
Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip
Data Sheet
CAUTION: It is advised that normal static precautions be taken in handling and assembly
of this component to prevent damage and/or degradation which may be induced by ESD.
Description
Avago’s AT-42000 is a general purpose NPN bipolar transis-
tor chip that offers excellent high frequency performance.
The 4 micron emitter-to-emitter pitch enables this transis-
tor to be used in many different functions. The 20 emit-
ter finger interdigitated geometry yields a medium sized
transistor with impedances that are easy to match for low
noise and medium power applications.
This device is designed for use in low noise, wideband am-
plifier, mixer and oscillator applications in the VHF, UHF,
and microwave frequencies. An optimum noise match
near 50W up to 1 GHz , makes this device easy to use as a
low noise amplifier.
The AT-42000 bipolar transistor is fabricated using Avago’s
10 GHz fT Self-Aligned-Transistor (SAT) process. The die is
nitride passivated for surface protection. Excellent device
uniformity, performance and reliability are produced by
the use of ionimplantation, self-alignment techniques,
and gold metalization in the fabrication of this device.
The recommended assembly procedure is gold-eutectic
die attach at 400oC and either wedge or ball bonding us-
ing 0.7 mil gold wire. See APPLICATIONS section, “Chip
Use”.
Features
High Output Power:
21.0 dBm Typical P1 dB at 2.0 GHz
20.5 dBm Typical P1 dB at 4.0 GHz
High Gain at 1 dB
Compression:
15.0 dB Typical G1 dB at 2.0 GHz
10.0 dB Typical G1 dB at 4.0 GHz
Low Noise Figure: 1.9 dB
Typical NFO at 2.0 GHz
High Gain-Bandwidth
Product: 9.0 GHz Typical fT
Chip Outline
相关PDF资料 |
PDF描述 |
|---|---|
| AT-42010 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-42035 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-42036-TR1G | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-42036-BLKG | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-42085 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT42010 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 80MA I(C) | SOT-100VAR |
| AT-42010 | 功能描述:射频双极小信号晶体管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| AT42035 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 80MA I(C) | MICRO-X |
| AT-42035 | 制造商:AVAGO 制造商全称:AVAGO TECHNOLOGIES LIMITED 功能描述:Up to 6 GHz Medium Power Silicon Bipolar Transistor |
| AT-42035-BLK | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X |
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