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| 型号： | AT-42010 |
| 英文描述： | Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip(高达6 GHz中等功率硅双极型晶体管) |
| 中文描述： | 到6 GHz中等功率硅双极晶体管芯片（高达6 GHz的中等功率硅双极型晶体管） |
| 文件页数： | 3/6页 |
| 文件大小： | 42K |
| 代理商： | AT-42010 |
3
AT-42010 Typical Performance, T
A
= 25
°
C
FREQUENCY (GHz)
Figure 4. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V
CE
= 8 V, I
C
= 35 mA.
G
0.1
0.5
0.3
1.0
3.0
6.0
I
C
(mA)
Figure 2. Output Power and 1 dB
Compressed Gain vs. Collector
Current and Frequency. V
CE
= 8 V.
24
20
16
12
8
4
G
1
P
1
0
10
20
30
40
50
P
1dB
G
1dB
2.0 GHz
2.0 GHz
4.0 GHz
4.0 GHz
40
35
30
25
20
15
10
5
0
MSG
MAG
|S
21E
|
2
I
C
(mA)
Figure 1. Insertion Power Gain vs.
Collector Current and Frequency.
V
CE
= 8 V.
20
16
12
8
4
0
|
2
|
2
0
10
20
30
40
50
1.0 GHz
2.0 GHz
4.0 GHz
I
C
(mA)
Figure 3. Output Power and 1 dB
Compressed Gain vs. Collector
Current and Voltage. f = 2.0 GHz.
10 V
4 V
6 V
4 V
10 V
6 V
24
20
16
12
16
14
12
10
G
1
P
1
0
10
20
30
40
50
P
1dB
G
1dB
FREQUENCY (GHz)
Figure 5. Noise Figure and Associated
Gain vs. Frequency.
V
CE
= 8 V, I
C
= 10 mA.
G
24
21
18
15
12
9
6
3
0
4
3
2
1
0
N
O
0.5
2.0
1.0
3.0
4.0 5.0
G
A
NF
O
相关PDF资料 |
PDF描述 |
|---|---|
| AT-42035 | Up to 6 GHz Medium Power Silicon Bipolar Transistor |
| AT-42070 | Up to 6 GHz Medium Power Silicon Bipolar Transistor |
| AT-42085 | Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip(高达6 GHz中等功率硅双极型晶体管) |
| AT-42086 | Up to 6 GHz Medium Power Silicon Bipolar Transistor |
| AT-42086-BLK | Up to 6 GHz Medium Power Silicon Bipolar Transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT42035 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 80MA I(C) | MICRO-X |
| AT-42035 | 制造商:AVAGO 制造商全称:AVAGO TECHNOLOGIES LIMITED 功能描述:Up to 6 GHz Medium Power Silicon Bipolar Transistor |
| AT-42035-BLK | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X |
| AT-42035G | 功能描述:射频双极小信号晶体管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| AT-42035-TR1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X |
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