- 您现在的位置：买卖IC网 > PDF目录64121 > AT-42010 C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | AT-42010 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | HERMETIC SEALED, CERAMIC, MICROSTRIP PACKAGE-4 |
| 文件页数： | 1/5页 |
| 文件大小： | 140K |
| 代理商： | AT-42010 |
AT-42010
Up to 6 GHz Medium Power Silicon Bipolar Transistor
Data Sheet
Features
HighOutputPower:
21.0dBmTypicalP1dBat2.0GHz
20.5dBmTypicalP1dBat4.0GHz
HighGainat1dBCompression:
14.0dBTypicalG1dBat2.0GHz
9.5dBTypicalG1dBat4.0GHz
LowNoiseFigure:
1.9dBTypicalNFOat2.0GHz
HighGain-BandwidthProduct:8.0GHzTypicalfT
HermeticGold-ceramicMicrostripPackage
100 mil Package
Description
Avago’sAT-42010isageneralpurposeNPNbipolartran-
sistorthatoffersexcellenthighfrequencyperformance.
The AT-42010 is housed in a hermetic, high reliability
100milceramicpackage.The4micronemitter-to-emitter
pitchenablesthistransistortobeusedinmanydifferent
functions.The20emitterfingerinterdigitatedgeometry
yields a medium sized transistor with impedances that
are easy to match for low noise and medium power
applications.Thisdeviceisdesignedforuseinlownoise,
widebandamplifier,mixerandoscillatorapplicationsin
theVHF,UHF,andmicrowavefrequencies.Anoptimum
noise match near 50Ω up to 1GHz, makes this device
easytouseasalownoiseamplifier.
TheAT-42010bipolartransistorisfabricatedusingAvago’s
10GHzfTSelf-Aligned-Transistor(SAT)process.Thedieis
nitridepassivatedforsurfaceprotection.Excellentdevice
uniformity,performanceandreliabilityareproducedby
the use of ion-implantation, self-alignment techniques,
andgoldmetalizationinthefabricationofthisdevice.
IFD-53010 pkg
相关PDF资料 |
PDF描述 |
|---|---|
| AT-901-C | 0 MHz - 4000 MHz RF/MICROWAVE FIXED ATTENUATOR |
| AT-901-PT | 0 MHz - 4000 MHz RF/MICROWAVE FIXED ATTENUATOR |
| AT-901-T | 0 MHz - 4000 MHz RF/MICROWAVE FIXED ATTENUATOR |
| AT-902-C | 0 MHz - 4000 MHz RF/MICROWAVE FIXED ATTENUATOR |
| AT-902-PT | 0 MHz - 4000 MHz RF/MICROWAVE FIXED ATTENUATOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT42035 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 80MA I(C) | MICRO-X |
| AT-42035 | 制造商:AVAGO 制造商全称:AVAGO TECHNOLOGIES LIMITED 功能描述:Up to 6 GHz Medium Power Silicon Bipolar Transistor |
| AT-42035-BLK | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X |
| AT-42035G | 功能描述:射频双极小信号晶体管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| AT-42035-TR1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X |
发布紧急采购，3分钟左右您将得到回复。