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参数资料
| 型号： | AT-42035 |
| 英文描述： | Up to 6 GHz Medium Power Silicon Bipolar Transistor |
| 中文描述： | 到6 GHz中等功率硅双极晶体管 |
| 文件页数： | 2/5页 |
| 文件大小： | 53K |
| 代理商： | AT-42035 |
4-160
AT-42035 Absolute Maximum Ratings
[1]
Absolute
Maximum
1.5
20
12
80
600
200
-65 to 200
Symbol
V
EBO
V
CBO
V
CEO
I
C
P
T
T
j
T
STG
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
CASE
= 25
°
C.
3. Derate at 5.7 mW/
°
C for T
C
> 95
°
C.
4. Storage above +150
°
C may tarnish the leads of this package making it difficult
to solder into a circuit. After a device has been soldered into a circuit, it may
be safely stored up to 200
°
C.
5. The small spot size of this technique results in a higher, though more
accurate determination of
θ
jc
than do alternate methods. See MEASURE-
MENTS section “Thermal Resistance” for more information.
Parameter
Units
V
V
V
mA
mW
°
C
°
C
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
[2,3]
Junction Temperature
Storage Temperature
[4]
Thermal Resistance
[2,5]
:
θ
jc
= 175
°
C/W
Electrical Specifications, T
A
= 25
°
C
Symbol
|S
21E
|
2
Insertion Power Gain; V
CE
= 8 V, I
C
= 35 mA
Parameters and Test Conditions
[1]
Units Min.
dB
Typ. Max.
11.0
5.0
21.0
20.5
14.0
9.5
2.0
3.0
13.5
10.0
8.0
150
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f= 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
10.0
P
1 dB
Power Output @ 1 dB Gain Compression
V
CE
= 8 V, I
C
= 35 mA
1 dB Compressed Gain; V
CE
= 8 V, I
C
= 35 mA
dBm
G
1 dB
dB
NF
O
Optimum Noise Figure: V
CE
= 8 V, I
C
= 10 mA
dB
G
A
Gain @ NF
O
; V
CE
= 8 V, I
C
= 10 mA
dB
f
T
h
FE
I
CBO
I
EBO
C
CB
Gain Bandwidth Product: V
CE
= 8 V, I
C
= 35 mA
Forward Current Transfer Ratio; V
CE
= 8 V, I
C
= 35 mA
Collector Cutoff Current; V
CB
= 8 V
Emitter Cutoff Current; V
EB
= 1 V
Collector Base Capacitance
[1]
: V
CB
= 8 V, f = 1 MHz
GHz
—
μ
A
μ
A
pF
30
270
0.2
2.0
0.28
Notes:
1. For this test, the emitter is grounded.
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PDF描述 |
|---|---|
| AT-42070 | Up to 6 GHz Medium Power Silicon Bipolar Transistor |
| AT-42085 | Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip(高达6 GHz中等功率硅双极型晶体管) |
| AT-42086 | Up to 6 GHz Medium Power Silicon Bipolar Transistor |
| AT-42086-BLK | Up to 6 GHz Medium Power Silicon Bipolar Transistor |
| AT-42086-TR1 | Up to 6 GHz Medium Power Silicon Bipolar Transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT-42035-BLK | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X |
| AT-42035G | 功能描述:射频双极小信号晶体管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| AT-42035-TR1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X |
| AT-42036 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:General purpose transistor |
| AT-42036-BLK | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X |
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