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参数资料
| 型号： | AT-42035 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | CERAMIC, MICROSTRIP-4 |
| 文件页数： | 1/5页 |
| 文件大小： | 65K |
| 代理商： | AT-42035 |
AT-42035
Up to 6 GHz Medium Power
Silicon Bipolar Transistor
Data Sheet
Features
High Output Power:
21.0 dBm Typical P1 dB at 2.0 GHz
20.5 dBm Typical P1 dB at 4.0 GHz
High Gain at 1 dB Compression:
14.0 dB Typical G1 dB at 2.0 GHz
9.5 dB Typical G1 dB at 4.0 GHz
Low Noise Figure:
1.9 dB Typical NFO at 2.0 GHz
High Gain-Bandwidth Product: 8.0 GHz Typical fT
Cost Effective Ceramic Microstrip Package
Lead-free Option Available
35 micro-X Package
Description
Avago’s AT-42035 is a general purpose NPN bipolar
transistor that offers excellent high frequency perfor-
mance. The AT-42035 is housed in a cost effective
surface mount 100 mil micro-X package. The 4 micron
emitter-to-emitter pitch enables this transistor to be
used in many different functions. The 20 emitter finger
interdigitated geometry yields a medium sized transis-
tor with impedances that are easy to match for low
noise and medium power applications. This device is
designed for use in low noise, wideband amplifier,
mixer and oscillator applications in the VHF, UHF, and
microwave frequencies. An optimum noise match near
50
up to 1 GHz, makes this device easy to use as a low
noise amplifier.
The AT-42035 bipolar transistor is fabricated using
Avago’s 10 GHz fT Self-Aligned-Transistor (SAT) pro-
cess. The die is nitride passivated for surface protection.
Excellent device uniformity, performance and reliability
are produced by the use of ion-implantation, self-align-
ment techniques, and gold metalization in the fabrica-
tion of this device.
相关PDF资料 |
PDF描述 |
|---|---|
| AT-42036-BLK | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-42036-TR1G | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-42036-TR1 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-42036-BLKG | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-42036-BLK | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT-42035-BLK | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X |
| AT-42035G | 功能描述:射频双极小信号晶体管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| AT-42035-TR1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X |
| AT-42036 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:General purpose transistor |
| AT-42036-BLK | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X |
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