参数资料
型号: AT-42070
元件分类: 小信号晶体管
英文描述: C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
文件页数: 1/5页
文件大小: 0K
代理商: AT-42070
AT-42070
Up to 6 GHz Medium Power Silicon Bipolar Transistor
Data Sheet
Features
HighOutputPower:
21.0dBmTypicalP1dBat2.0GHz
20.5dBmTypicalP1dBat4.0GHz
HighGainat1dBCompression:
15.0dBTypicalG1dBat2.0GHz
10.0dBTypicalG1dBat4.0GHz
LowNoiseFigure:1.9dBTypicalNFOat2.0GHz
HighGain-BandwidthProduct:8.0GHzTypicalfT
HermeticGold-ceramicMicrostripPackage
Description
Avago’s AT-42070 is a general purpose NPN bipolar
transistorthatoffersexcellenthighfrequencyperformance.
TheAT-42070ishousedinahermetic,highreliabilitygold-
ceramic70milmicrostrippackage.The4micronemitter-
to-emitterpitchenablesthistransistortobeusedinmany
different functions. The 20 emitter finger interdigitated
geometryyieldsamediumsizedtransistorwithimpedances
that are easy to match for low noise and medium power
applications.Thisdeviceisdesignedforuseinlownoise,
widebandamplifier,mixerandoscillatorapplicationsinthe
VHF,UHF,andmicrowavefrequencies.Anoptimumnoise
matchnear50Ωupto1GHz,makesthisdeviceeasytouse
asalownoiseamplifier.
TheAT-42070bipolartransistorisfabricatedusingAvago’s
10GHzfTSelf-Aligned-Transistor(SAT)process.Thedieis
nitridepassivatedforsurfaceprotection.Excellentdevice
uniformity,performanceandreliabilityareproducedby
the use of ion-implantation, self-alignment techniques,
andgoldmetalizationinthefabricationofthisdevice.
70 mil Package
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