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参数资料
| 型号： | AT-42086-BLK |
| 厂商： | AGILENT TECHNOLOGIES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件页数： | 1/5页 |
| 文件大小： | 54K |
| 代理商： | AT-42086-BLK |
4-174
Up to 6 GHz Medium Power
Silicon Bipolar Transistor
Technical Data
Features
High Output Power:
20.5 dBm Typical P1dB at 2.0 GHz
High Gain at 1 dB
Compression:
13.5 dB Typical G1dBat 2.0 GHz
Low Noise Figure:
1.9 dB Typical NFOat 2.0 GHz
High Gain-Bandwidth
Product: 8.0 GHz Typical fT
Surface Mount Plastic
Package
Tape-and-Reel Packaging
Option Available[1]
AT-42086
86 Plastic Package
Note:
1. Refer to PACKAGING section “Tape-
and-Reel Packaging for Semiconductor
Devices.”
Description
Hewlett-Packard’s AT-42086 is a
general purpose NPN bipolar
transistor that offers excellent
high frequency performance. The
AT-42086 is housed in a low cost
surface mount .085" diameter
1
4
3
2
EMITTER
BASE
EMITTER
COLLECTOR
PinConnections
plastic package. The 4 micron
emitter-to-emitter pitch enables
this transistor to be used in many
different functions. The 20 emitter
finger interdigitated geometry
yields a medium sized transistor
with impedances that are easy to
match for low noise and medium
power applications. Applications
include use in wireless systems as
an LNA, gain stage, buffer, oscilla-
tor, and mixer. An optimum noise
match near 50
up to 1 GHz,
makes this device easy to use as a
low noise amplifier.
The AT-42086 bipolar transistor is
fabricated using Hewlett- Packard’s
10 GHz fT Self-Aligned-Transistor
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
5965-8914E
420
相关PDF资料 |
PDF描述 |
|---|---|
| AT-42086-TR1 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-42086-BLK | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-60111-TR1 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-60211-TR2 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-60111-TR2 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT-42086-BLKG | 功能描述:射频双极小信号晶体管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| AT-42086-BLKG | 制造商:Avago Technologies 功能描述:RF BIPOLAR TRANSISTOR |
| AT-42086-TR1 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Up to 6 GHz Medium Power Silicon Bipolar Transistor |
| AT-42086-TR1G | 功能描述:射频双极小信号晶体管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| AT-42086-TR2G | 功能描述:射频双极小信号晶体管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
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