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参数资料
| 型号： | AT-64000-GP4 |
| 元件分类： | 功率晶体管 |
| 英文描述： | HF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | DIE-5 |
| 文件页数： | 2/4页 |
| 文件大小： | 117K |
| 代理商： | AT-64000-GP4 |
2
Table 1. Absolute Maximum Ratings at Tc = +25
°°°°°C
Notes:
1. RF performance is determined by packaging and testing 10 devices per wafer.
2. RF performance is measured in 230 mil BeO packages.
3.
ηT = (RF Output Power)/(RF Input Power + VCE x IC)
Table 2. Electrical Specifications [1,2] at Tc = +25
°°°°°C
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
2. Maximum ratings are tested in 230 mil BeO packages.
3. T—CASE = 25
°C. Derate at 25 mW/°C for Tc > 80°C
Symbol
Parameter
Unit
Max Rating
VEBO
Emitter-Base Voltage
V
2.2
VCBO
Collector-Base Voltage
V
40
VCEO
Collector-Emitter Voltage
V
20
IC
Collector Current
mA
200
PT
Power Dissipation[3]
W3
Tj
Junction Temperature
0C200
Tstg
Storage Temperature
0C
-65 to 200
θ
jc
Thermal Resistance
0C/W
40
Symbol
Parameter and Test Condition
Units Min.
Typ.
Max.
|S21E|2
Insertion Power Gain; Vce = 16V, Ic = 110 mA
f = 2.0 GHz
f = 4.0 GHz
dB
6.5
2.0
P1dB
Power Output @1dB Gain Compression
Vce = 16V, Ic = 110 mA
f = 2.0 GHz
f = 4.0 GHz
dBm
25.5
27.5
26.5
G1dB
1 dB Compressed Gain
Vce = 16V, Ic = 110 mA
f = 2.0 GHz
f = 4.0 GHz
dB
7.0
12.5
9.5
η
T
Total Efficiency[3] at 1 dB Gain Compression
Vce = 16V, Ic = 110 mA
f = 4.0 GHz
%
35.0
hFE
ICBO
IEBO
Forward Current Transfer Ratio; Vce = 8V, Ic = 110 mA
Collector Cutoff Current; VCB = 16 V
Emitter Cutoff Current; VEB = 1V
-
uA
20
50
200
100
5.0
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