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参数资料
| 型号： | AT-64020G |
| 厂商： | AGILENT TECHNOLOGIES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件页数： | 1/4页 |
| 文件大小： | 64K |
| 代理商： | AT-64020G |
Agilent AT-64020
Up to 4 GHz Linear Power
Silicon Bipolar Transistor
Data Sheet
Features
High Output Power:
27.5 dBm Typical P1 dB at 2.0 GHz
26.5 dBm Typical P1 dB at 4.0 GHz
High Gain at 1 dB
Compression:
10.0 dB Typical G1 dB at 2.0 GHz
6.5 dB Typical G1 dB at 4.0 GHz
35% Total Efficiency
Emitter Ballast Resistors
Hermetic, Metal/Beryllia
Package
200 mil BeO Package
Description
The AT-64020 is a high perfor-
mance NPN silicon bipolar
transistor housed in a hermetic
BeO disk package for good
thermal characteristics. This
device is designed for use in
medium power, wide band
amplifier and oscillator applica-
tions operating over VHF, UHF
and microwave frequencies.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metallization
in the fabrication of these devices.
The use of ion-implanted ballast
resistors ensures uniform current
distribution through the multiple
emitter fingers.
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相关代理商/技术参数 |
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| AT64023 | 制造商:Hewlett Packard Co 功能描述: |
| AT-64023 | 功能描述:射频双极小信号晶体管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| AT640283 | 制造商:MA/COM 功能描述:New |
| AT64035 | 制造商:ASI 制造商全称:ASI 功能描述:NPN SILICON RF TRANSISTOR |
| AT641TAT-8IN-TSCREEN |
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