PIN Diode Based V ariable
Attenuator, 50 - 1000 MHz
A
SOW-16
V 5.00
Electrical Specifications
2
: T
A
= 25°C
Features
I
High Dynamic Range: 42dB Typical
I
Flat Attenuation vs. Frequency
I
High P1dB Compression
I
Operates on a Single +5V Supply:
I
SOW-16, Wide Body Package
I
50 Ohm Nominal Impedance
Description
M/A-COM's AT10-0019 is a Voltage Controlled PIN diode
based
π
attenuator packaged in a low cost, 16 lead wide
body plastic SMT package. The PIN diode design makes
this part well suited for applications where low distortion or
high linear operating power levels are required. These
attenuators are ideal for gain control in multi-channel
digital communications systems.
Package outline conforms to JEDEC standard MS-013AA.
Parameter
Test Conditions
Frequency
Units
Min
Typical
Max
Insertion Loss
Vcont.: +10 V
50 - 1000 MHz
dB
—
2.4
2.8
Dynamic Range
Vcont.: 0 V
50 - 1000 MHz
dB
33
42
—
Attenuation
Flatness
VSWR
Attenuation: 0 to 20 dB
Attenuation: 20 to 30 dB
Vcont.: 0 - 10V
50 - 1000 MHz
50 - 1000 MHz
50 - 1000 MHz
dB
dB
Ratio
—
—
—
1.0
1.5
1.7:1
1.5
2.0
2.1:1
Trise, Tfall
Ton, Toff
Transients
1 dB
Compression
10%/90%, 90%/10%
50% Cntl to 90%/10% RF
In-band
Vcont.: 0 - 10V
—
μS
μS
mV
dBm
dBm
dBm
dBm
dBm
—
—
—
10
17
21
24
34
10
15
150
13
20
24
27
37
20
25
250
—
—
—
—
—
100 MHz
500 MHz
1000 MHz
100 MHz
1000 MHz
Input IP
3
Vcont.: 0 - 10V
Two-tone inputs up to +10
dBm
—
V
CC
—
V
+4.75
+5.0
+5.25
I
CC
V
CC
= 5.25 V
DC
mA
—
2
2.5
Control Current
—
DC
mA
—
2.7
3.5
2. Unit requires external .01 μF DC Blocks on RF lines.
Parameter
Max. Input Power
50 - 500 MHz
500 - 1000 MHz
Voltages
Absolute Maximum
+24 dBm
+30 dBm
-1 V to +7.0 V
-1 V to +15 V
-40°C to +85°C
-65°C to +125°C
V
Control Voltage
Operating Temperature
Storage Temperature
Absolute Maximum Ratings
1
1. Operation of this device above any one of these parameters
may cause permanent damage.