参数资料
型号: AT24C128BY6-YH-T
厂商: Atmel
文件页数: 18/23页
文件大小: 0K
描述: IC EEPROM 128KBIT 1MHZ 8DFN
标准包装: 1
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 128K (16K x 8)
速度: 400kHz,1MHz
接口: I²C,2 线串口
电源电压: 1.8 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-UDFN 裸露焊盘
供应商设备封装: 8-MLP(2x3)
包装: 标准包装
其它名称: AT24C128BY6-YH-TDKR
8A2 - TSSOP
3
2 1
Pin 1 indicator
this corner
E1
E
L1
N
L
Top View
End View
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL
MIN
NOM
MAX
NOTE
b
A
D
E
E1
2.90
4.30
3.00
6.40 BSC
4.40
3.10
4.50
2, 5
3, 5
A
1.20
e
A2
A2
0.80
1.00
1.05
D
b
0.19
0.30
4
e
0.65 BSC
Side View
L
0.45
0.60
0.75
L1
1.00 REF
Notes:
1. This drawing is for general information only. Refer to JEDEC Drawing MO-153, Variation AA, for proper dimensions, tolerances,
datums, etc.
2. Dimension D does not include mold Flash, protrusions or gate burrs. Mold Flash, protrusions and gate burrs shall not exceed
0.15 mm (0.006 in) per side.
3. Dimension E1 does not include inter-lead Flash or protrusions. Inter-lead Flash and protrusions shall not exceed 0.25 mm
(0.010 in) per side.
4. Dimension b does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess of the
b dimension at maximum material condition. Dambar cannot be located on the lower radius of the foot. Minimum space between
protrusion and adjacent lead is 0.07 mm.
5. Dimension D and E1 to be determined at Datum Plane H.
5/30/02
TITLE
DRAWING NO.
REV.
R
2325 Orchard Parkway
San Jose, CA 95131
8A2 , 8-lead, 4.4 mm Body, Plastic
Thin Shrink Small Outline Package (TSSOP)
8A2
B
18
AT24C128B
5296A–SEEPR–1/08
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