参数资料
型号: AT24C128C-SSHM-T
厂商: Atmel
文件页数: 10/22页
文件大小: 0K
描述: IC EEPROM 128KBIT 400KHZ 8SOIC
标准包装: 1
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 128K (16K x 8)
速度: 400kHz,1MHz
接口: I²C,2 线串口
电源电压: 1.7 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 剪切带 (CT)
其它名称: AT24C128C-SSHM-TCT
8.
Write Operations
Byte Write : A write operation requires two 8-bit data word addresses following the device address word and
acknowledgment. Upon receipt of this address, the EEPROM will again respond with a zero, and then clock in the first
8-bit data word. Following receipt of the 8-bit data word, the EEPROM will output a zero. The addressing device, such as
a microcontroller, must then terminate the write sequence with a stop condition. At this time, the EEPROM enters an
internally-timed write cycle, t WR , to the nonvolatile memory. All inputs are disabled during this write cycle and the
EEPROM will not respond until the write is complete (See Figure 7-1 ).
Figure 8-1. Byte Write
S
T
A
R
T
Device
Address
W
R
I
T
E
First
Word Address
Second
Word Address
Data
S
T
O
P
SDA Line
M
S
B
R A
/ C
W K
A
C
K
A
C
K
A
C
K
Note:
* = Don’t care bit
Page Write: The 128K EEPROM is capable of 64-byte page writes.
A page write is initiated the same way as a byte write, but the microcontroller does not send a stop condition after the first
data word is clocked in. Instead, after the EEPROM acknowledges receipt of the first data word, the microcontroller can
transmit up to 63 more data words. The EEPROM will respond with a zero after each data word received. The
microcontroller must terminate the page write sequence with a stop condition (See Figure 8-2 ).
Figure 8-2. Page Write
S
T
A
R
T
Device
Address
W
R
I
T
E
First
Word Address
Second
Word Address
Data (n)
Data (n + x)
S
T
O
P
SDA Line
M
S
B
R A
/ C
W K
A
C
K
A
C
K
A
C
K
A
C
K
Note:
* = Don’t care bit
The data word address lower six bits are internally incremented following the receipt of each data word. The higher data
word address bits are not incremented, retaining the memory page row location. When the word address, internally
generated, reaches the page boundary, the following byte is placed at the beginning of the same page. If more than 64
data words are transmitted to the EEPROM, the data word address will roll-over and the previous data will be
overwritten. The address roll-over during write is from the last byte of the current page to the first byte of the same page.
Acknowledge Polling : Once the internally-timed write cycle has started and the EEPROM inputs are disabled,
acknowledge polling can be initiated. This involves sending a start condition followed by the device address word. The
read/write bit is representative of the operation desired. Only if the internal write cycle has completed will the EEPROM
respond with a zero, allowing the read or write sequence to continue.
Atmel AT24C128C [DATASHEET]
8734B–SEEPR–9/2012
10
相关PDF资料
PDF描述
XC6VLX75T-3FFG484C IC FPGA VIRTEX 6 74K 484FFGBGA
RMC65DRYN-S93 CONN EDGECARD 130PS DIP .100 SLD
XC6VLX75T-2FFG484I IC FPGA VIRTEX 6 74K 484FFGBGA
RSC65DRYH-S93 CONN EDGECARD 130PS DIP .100 SLD
XC5VSX50T-1FF665C IC FPGA VIRTEX-5 50K 665FCBGA
相关代理商/技术参数
参数描述
AT24C128C-SSHM-T SL901 制造商:Atmel Corporation 功能描述:IC EEPROM 128KBIT 1MHZ 8SOIC
AT24C128C-SSHM-T 制造商:Atmel Corporation 功能描述:SERIAL EEPROM 128K (16K X 8)
AT24C128C-SSPD-T 制造商:Atmel Corporation 功能描述:
AT24C128C-UUM0B-T 功能描述:IC EEPROM 128KBIT 1MHZ 4WLCSP 制造商:microchip technology 系列:- 包装:带卷(TR) 零件状态:在售 存储器类型:非易失 存储器格式:EEPROM 技术:EEPROM 存储容量:128Kb (16K x 8) 时钟频率:1MHz 写周期时间 - 字,页:5ms 访问时间:550ns 存储器接口:I2C 电压 - 电源:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C(TA) 安装类型:表面贴装 封装/外壳:4-XFBGA,WLCSP 供应商器件封装:4-WLCSP 标准包装:5,000
AT24C128C-WWU11M 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:I2C-Compatible (2-Wire) Serial EEPROM