参数资料
| 型号： | AT24HC02B-TH-T |
| 厂商： | Atmel |
| 文件页数： | 4/19页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 2KBIT 1MHZ 8TSSOP |
| 标准包装： | 1 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 2K (256 x 8) |
| 速度： | 400kHz，1MHz |
| 接口： | I²C，2 线串口 |
| 电源电压： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-TSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 8-TSSOP |
| 包装： | 剪切带 (CT) |
| 其它名称： | AT24HC02B-TH-TCT |
4. Memory Organization
AT24HC02B, 2K SERIAL EEPROM: The 2K is internally organized with 32 pages of 8 bytes
each. Random word addressing requires an 8-bit data word address.
Table 4-1.
Pin Capacitance (1)
Applicable over recommended operating range from T AI = 25 ? C, f = 1.0 MHz, V CC = +1.8V
Symbol
C I/O
C IN
Test Condition
Input/Output Capacitance (SDA)
Input Capacitance (A 0 , A 1 , A 2 , SCL)
Max
8
6
Units
pF
pF
Conditions
V I/O = 0V
V IN = 0V
Note:
1. This parameter is characterized and is not 100% tested.
Table 4-2.
DC Characteristics
Applicable over recommended operating range from: T AI = ? 40 ? C to +85 ? C, V CC = +1.8V to +5.5V (unless otherwise noted)
Symbol
V CC1
V CC2
V CC3
V CC4
I CC
I CC
I SB1
I SB2
I SB3
I SB4
I LI
I LO
V IL
V IH
V OL2
V OL1
Parameter
Supply Voltage
Supply Voltage
Supply Voltage
Supply Voltage
Supply Current V CC = 5.0V
Supply Current V CC = 5.0V
Standby Current V CC = 1.8V
Standby Current V CC = 2.5V
Standby Current V CC = 2.7V
Standby Current V CC = 5.0V
Input Leakage Current
Output Leakage Current
Input Low Level (1)
(1)
Input High Level
Output Low Level V CC = 3.0V
Output Low Level V CC = 1.8V
Test Condition
READ at 100 kHz
WRITE at 100 kHz
V IN = V CC or V SS
V IN = V CC or V SS
V IN = V CC or V SS
V IN = V CC or V SS
V IN = V CC or V SS
V OUT = V CC or V SS
I OL = 2.1 mA
I OL = 0.15 mA
Min
1.8
2.5
2.7
4.5
? 0.6
V CC x 0.7
Typ
0.4
2.0
0.6
1.4
1.6
8.0
0.10
0.05
Max
5.5
5.5
5.5
5.5
1.0
3.0
3.0
4.0
4.0
18.0
3.0
3.0
V CC x 0.3
V CC + 0.5
0.4
0.2
Units
V
V
V
V
mA
mA
μA
μA
μA
μA
μA
μA
V
V
V
V
Note:
4
1. V IL min and V IH max are reference only and are not tested.
AT24HC02B
5134E–SEEPR–3/08
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