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参数资料
| 型号： | AT25160B-TH-T |
| 厂商： | Atmel |
| 文件页数： | 9/26页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 16KBIT 20MHZ 8TSSOP |
| 标准包装： | 5,000 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 16K (2K x 8) |
| 速度： | 5MHz，10MHz，20MHz |
| 接口： | SPI 3 线串行 |
| 电源电压： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-TSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 8-TSSOP |
| 包装： | 带卷 (TR) |
AT25080B/160B
WRITE SEQUENCE (WRITE): In order to program the AT25080B/160B, two separate instructions must be exe-
cuted. First, the device must be write enabled via the WREN instruction. Then a write (WRITE) instruction may be
executed. Also, the address of the memory location(s) to be programmed must be outside the protected address
field location selected by the block write protection level. During an internal write cycle, all commands will be
ignored except the RDSR instruction.
A write instruction requires the following sequence. After the CS line is pulled low to select the device, the WRITE
op-code is transmitted via the SI line followed by the byte address (A15 – A0) and the data (D7 – D0) to be pro-
grammed (see Table 3-6 ). Programming will start after the CS pin is brought high. The low-to-high transition of the
CS pin must occur during the SCK low-time immediately after clocking in the D0 (LSB) data bit.
The READY/BUSY status of the device can be determined by initiating a read status register
(RDSR) instruction. If Bit 0 = “1”, the write cycle is still in progress. If Bit 0 = “0”, the write cycle has ended. Only the
RDSR instruction is enabled during the write programming cycle.
The AT25080B/160B is capable of a 32-byte page write operation. After each byte of data is received, the five low-
order address bits are internally incremented by one; the high-order bits of the address will remain constant. If
more than 32 bytes of data are transmitted, the address counter will roll over and the previously written data will be
overwritten. The AT25080B/160B is automatically returned to the write disable state at the completion of a write
cycle.
Note:
If the device is not write-enabled (WREN), the device will ignore the write instruction and will return to the standby
state, when CS is brought high. A new CS falling edge is required to reinitiate the serial communication.
Table 4-6.
Address Key
Address
A N
Don’t Care Bits
AT25080B
A 9 –A 0
A 15 –A 10
AT25160B
A 10 –A 0
A 15 –A 11
9
5228E–SEEPR–3/12
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| AT25160BU3-UU-T | 功能描述:电可擦除可编程只读存储器 Serial 电可擦除可编程只读存储器 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| AT25160B-W-11 | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:SPI Serial EEPROMs 8K (1024 x 8) 16K (2048 x 8) |
| AT25160B-XHL-B | 功能描述:电可擦除可编程只读存储器 SERIAL 电可擦除可编程只读存储器 16K (2K X 8) SPI 1.8V RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| AT25160B-XHLHX-T | 功能描述:SEEPROM, 16K, SPI - 1.8-5.5V, 20 制造商:atmel 系列:* 零件状态:即将推出 标准包装:5,000 |
| AT25160B-XHL-T | 功能描述:电可擦除可编程只读存储器 SERIAL 电可擦除可编程只读存储器 16K (2K X 8) SPI 1.8V RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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