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参数资料
| 型号： | AT25256A-10TU-1.8 |
| 厂商： | Atmel |
| 文件页数： | 11/24页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 256KBIT 20MHZ 8TSSOP |
| 标准包装： | 100 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 256K (32K x 8) |
| 速度： | 5MHz，10MHz，20MHz |
| 接口： | SPI 3 线串行 |
| 电源电压： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-TSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 8-TSSOP |
| 包装： | 管件 |
| 其它名称： | AT25AT256A-10TU-1.8 SL383 AT25AT256A-10TU-1.8 SL383-ND |
AT25128A_256A
reached, the address counter will roll over to the lowest address allowing the entire memory to
be read in one continuous read cycle.
WRITE SEQUENCE (WRITE): In order to program the AT25128A/256A, two separate instruc-
tions must be executed. First, the device must be write enabled via the Write Enable (WREN)
Instruction. Then a Write instruction may be executed. Also, the address of the memory loca-
tion(s) to be programmed must be outside the protected address field location selected by the
Block Write Protection Level. During an internal write cycle, all commands will be ignored except
the RDSR instruction.
A Write Instruction requires the following sequence. After the CS line is pulled low to select the
device, the Write op-code is transmitted via the SI line followed by the byte address and the data
(D7 - D0) to be programmed (see Table 3-6 ). Programming will start after the CS pin is brought
high. (The Low-to-High transition of the CS pin must occur during the SCK low time immediately
after clocking in the D0 (LSB) data bit.
The Ready/Busy status of the device can be determined by initiating a Read Status Register
(RDSR) Instruction. If Bit 0 = 1, the Write cycle is still in progress. If Bit 0 = 0, the Write cycle has
ended. Only the Read Status Register instruction is enabled during the Write programming
cycle.
The AT25128A/256A is capable of a 64-byte Page Write operation. After each byte of data is
received, the six low order address bits are internally incremented by one; the high order bits of
the address will remain constant. If more than 64 bytes of data are transmitted, the address
counter will roll over and the previously written data will be overwritten. The AT25128A/256A is
automatically returned to the write disable state at the completion of a Write cycle.
NOTE: If the device is not write enabled (WREN), the device will ignore the Write instruction
and will return to the standby state, when CS is brought high. A new CS falling edge is required
to re-initiate the serial communication.
Table 3-6.
Address Key
Address
A N
Don’t Care Bits
AT25128A
A 13 ? A 0
A 15 ? A 14
AT25256A
A 14 ? A 0
A 15
11
3368J–SEEPR–06/07
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| AT25160A-10TU-2.7 | IC EEPROM 16KBIT 20MHZ 8TSSOP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT25256A-10TU-2.7 | 功能描述:电可擦除可编程只读存储器 NIPDAU 2.7V - 10MS 2.7 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| AT25256AN-10SI-1.8 | 功能描述:IC EEPROM 256KBIT 20MHZ 8SOIC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并联 电源电压:2.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 |
| AT25256AN-10SI-1.8 SL383 | 功能描述:IC EEPROM 256KBIT 20MHZ 8SOIC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并联 电源电压:2.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 |
| AT25256AN-10SI-1.8-T | 功能描述:IC EEPROM 256KBIT 20MHZ 8SOIC 制造商:microchip technology 系列:- 包装:带卷（TR） 零件状态:停產 存储器类型:非易失 存储器格式:EEPROM 技术:EEPROM 存储容量:256Kb （32K x 8） 时钟频率:20MHz 写周期时间 - 字，页:5ms 存储器接口:SPI 电压 - 电源:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C（TA） 安装类型:表面贴装 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商器件封装:8-SOIC 基本零件编号:AT25256 标准包装:3,000 |
| AT25256AN-10SI-2.7 | 功能描述:IC EEPROM 256KBIT 20MHZ 8SOIC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并联 电源电压:2.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 |
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