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参数资料
| 型号： | AT25320W-10SC |
| 厂商： | Atmel |
| 文件页数： | 10/21页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 32KBIT 3MHZ 8SOIC |
| 标准包装： | 94 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 32K (4K x 8) |
| 速度： | 3MHz |
| 接口： | SPI 3 线串行 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
READ SEQUENCE (READ): Reading the AT25080/160/320/640 via the SO (Serial Output)
pin requires the following sequence. After the CS line is pulled low to select a device, the
READ op-code is transmitted via the SI line followed by the byte address to be read (A15 - A0,
Refer to Table 6). Upon completion, any data on the SI line will be ignored. The data (D7 - D0)
at the specified address is then shifted out onto the SO line. If only one byte is to be read, the
CS line should be driven high after the data comes out. The READ sequence can be contin-
ued since the byte address is automatically incremented and data will continue to be shifted
out. When the highest address is reached, the address counter will roll over to the lowest
address allowing the entire memory to be read in one continuous READ cycle.
WRITE SEQUENCE (WRITE): In order to program the AT25080/160/320/640, two separate
instructions must be executed. First, the device must be write enabled via the Write Enable
(WREN) Instruction. Then a Write (WRITE) Instruction may be executed. Also, the address of
the memory location(s) to be programmed must be outside the protected address field location
selected by the Block Write Protection Level. During an internal write cycle, all commands will
be ignored except the RDSR instruction.
A Write Instruction requires the following sequence. After the CS line is pulled low to select the
device, the WRITE op-code is transmitted via the SI line followed by the byte address
(A15 - A0) and the data (D7 - D0) to be programmed (Refer to Table 6). Programming will start
after the CS pin is brought high. (The LOW-to-High transition of the CS pin must occur during
the SCK low-time immediately after clocking in the D0 (LSB) data bit.
The READY/BUSY status of the device can be determined by initiating a READ STATUS
REGISTER (RDSR) Instruction. If Bit 0 = 1, the WRITE cycle is still in progress. If Bit 0 = 0, the
WRITE cycle has ended. Only the READ STATUS REGISTER instruction is enabled during
the WRITE programming cycle.
The AT25080/160/320/640 is capable of a 32-byte PAGE WRITE operation. After each byte of
data is received, the five low order address bits are internally incremented by one; the high
order bits of the address will remain constant. If more than 32 bytes of data are transmitted,
the address counter will roll over and the previously written data will be overwritten. The
AT25080/160/320/640 is automatically returned to the write disable state at the completion of
a WRITE cycle.
NOTE: If the device is not Write enabled (WREN), the device will ignore the Write instruction
and will return to the standby state, when CS is brought high. A new CS falling edge is
required to re-initiate the serial communication.
Table 6. Address Key
Address
A N
Don't Care Bits
AT25080
A 9 - A 0
A 15 - A 10
AT25160
A 10 - A 0
A 15 - A 11
AT25320
A 11 - A 0
A 15 - A 12
AT25640
A 12 - A 0
A 15 - A 13
10
AT25080/160/320/640
0675M–SEEPR–9/03
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| AT25320W-10SC-2.7 | 功能描述:IC EEPROM 32KBIT 3MHZ 8SOIC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA（7x7） 包装:托盘 |
| AT25320W-10SI | 功能描述:IC EEPROM 32KBIT 3MHZ 8SOIC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA（7x7） 包装:托盘 |
| AT25320W-10SI-2.7 | 功能描述:IC EEPROM 32KBIT 3MHZ 8SOIC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA（7x7） 包装:托盘 |
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