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参数资料
| 型号： | AT26DF081A-SSU |
| 厂商： | Atmel |
| 文件页数： | 39/40页 |
| 文件大小： | 0K |
| 描述： | IC FLASH 8MBIT 70MHZ 8SOIC |
| 标准包装： | 100 |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | DataFLASH |
| 存储容量： | 8M（4096 页 x 256 字节） |
| 速度： | 70MHz |
| 接口： | SPI 3 线串行 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
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AT26DF081A
16. Revision History
Revision Level – Release Date
A – November 2005
B – March 2006
C – April 2006
D – May 2006
E – January 2007
F – March 2007
G – June 2009
History
Initial Release
Added Global Protect and Global Unprotect Feature
- Made various minor text changes throughout document
- Added Global Protect/Unprotect section to document
- Changed Write Status Register section
Removed EPE bit from Status Register
Changed Note 5 of 8S2 package drawing to generalize terminal plating comment
Removed “Preliminary” designation.
Changed page and byte program specifications in Section 12.5
- Increased typical page program time from 1.5 ms to 3.0 ms
- Increased maximum page program time from 3.0 ms to 5.0 ms
- Increased typical byte program time from 6 μs to 12 μs
Added footnote (1) to t CHPE parameter in Section 12.5
Added EPE bit description to the Read Status Register section.
Reduced typical read currents in Section 12.3 .
Improved program and erase times in Section 12.5 .
- Reduced typical page program time from 3.0 ms to 1.2 ms
- Reduced typical byte program time from 12 μs to 7 μs
- Reduced 32KB typical block erase time from 350 ms to 250 ms
- Reduced 64KB typical block erase time from 700 ms to 400 ms
- Reduced typical Chip Erase time from 10 sec to 6 sec
Corrected 8S1 package drawing heading from EIAJ SOIC to JEDEC SOIC.
Updated to new template.
Corrected errors in datasheet missed when “Preliminary” designation was removed.
- Changed Deep Power-Down Current typical value from 10 μa to 25 μa
- Changed Deep Power-Down Current maximum value from 15 μa to 35 μa
39
3600G–DFLASH–06/09
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PDF描述 |
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| AT26DF321-SU | IC FLASH 32MBIT 66MHZ 8SOIC |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AT26DF081A-SSU-RET | 制造商:Atmel Corporation 功能描述: |
| AT26DF081A-ST-B | 制造商:Adesto Technologies Corporation 功能描述:8-SOIC-W, AUTO GRADE 3, 2.7V, TUBE - Rail/Tube |
| AT26DF081A-ST-T | 制造商:Adesto Technologies Corporation 功能描述:8-SOIC-W, AUTO GRADE 3, 2.7V, T&R - Tape and Reel |
| AT26DF081A-SU | 功能描述:闪存 8M 8 I/O Pins SPI 256B 2.7V-3.6V RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT26DF081-MU | 制造商:Adesto Technologies Corporation 功能描述:SF DATAFLASH, 8M, MLF, IND TEMP,GREEN - Trays |
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