参数资料
型号: AT27C256-25LI
英文描述: x8 EPROM
中文描述: x8存储器
文件页数: 1/16页
文件大小: 156K
代理商: AT27C256-25LI
1
Features
Fast Read Access Time - 45 ns
Low-Power CMOS Operation
– 100 μA max. Standby
– 25 mA max. Active at 5 MHz (AT27C010L)
– 35 mA max. Active at 5 MHz (AT27C010)
JEDEC Standard Packages
– 32-Lead 600-mil PDIP
– 32-Lead PLCC
– 32-Lead TSOP
5V
±
10% Supply
High Reliability CMOS Technology
– 2000V ESD Protection
– 200 mA Latchup Immunity
Rapid Programming Algorithm - 100 μs/byte (typical)
CMOS and TTL Compatible Inputs and Outputs
Integrated Product Identification Code
Commercial, Industrial and Automotive Temperature Ranges
Description
The AT27C010(L) is a low-power, high-performance 1,048,576-bit one-time program-
mable read only memory (OTP EPROM) organized as 128K by 8 bits. They require
only one 5V power supply in normal read mode operation. Any byte can be accessed
in less than 45 ns, eliminating the need for speed reducing WAIT states on high-per-
formance microprocessor systems.
Two power versions are offered. In read mode, the AT27C010 typically consumes 25
mA while the AT27C010L requires only 8 mA. Standby mode supply current for both
parts is typically less than 10 μA.
1-Megabit
(128K x 8)
OTP EPROM
AT27C010(L)
Rev. 0321J–07/98
1M bit EPROM
Pin Configurations
Pin Name
Function
A0 - A16
Addresses
O0 - O7
Outputs
CE
Chip Enable
OE
Output Enable
PGM
Program Strobe
NC
No Connect
TSOP Top View
Type 1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
A9
A8
A13
A14
NC
PGM
VCC
VPP
A16
A15
A12
A7
A6
A5
A4
OE
A10
CE
O7
O6
O5
O4
O3
GND
O2
O1
O0
A0
A1
A2
A3
PLCC Top View
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A7
A6
A5
A4
A3
A2
A1
A0
O0
A14
A13
A8
A9
A11
OE
A10
CE
O7
4
3
2
1
3
3
3
1
1
1
1
1
1
2
O
O
G
O
O
O
O
A
A
A
V
V
P
N
(continued)
PDIP Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VPP
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
O0
O1
O2
GND
VCC
PGM
NC
A14
A13
A8
A9
A11
OE
A10
CE
O7
O6
O5
O4
O3
相关PDF资料
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