参数资料
型号: AT27C512R-12LC
英文描述: x8 EPROM
中文描述: x8存储器
文件页数: 8/16页
文件大小: 156K
代理商: AT27C512R-12LC
AT27C010(L)
8
Rapid Programming Algorithm
A 100
μ
s PGM pulse width is used to program. The
address is set to the first location. V
CC
is raised to 6.5V and
V
PP
is raised to 13.0V. Each address is first programmed
with one 100
μ
s PGM pulse without verification. Then a
verification / reprogramming loop is executed for each
address. In the event a byte fails to pass verification, up to
10 successive 100
μ
s pulses are applied with a verification
after each pulse. If the byte fails to verify after 10 pulses
have been applied, the part is considered failed. After the
byte verifies properly, the next address is selected until all
have been checked. V
PP
is then lowered to 5.0V and V
CC
to
5.0V. All bytes are read again and compared with the origi-
nal data to determine if the device passes or fails.
相关PDF资料
PDF描述
AT27C512R-12LI x8 EPROM
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AT27C512R-15LI x8 EPROM
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AT27C512R-15PA x8 EPROM
相关代理商/技术参数
参数描述
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AT27C512R-12PC 功能描述:可擦除可编程ROM 512k bit RoHS:否 制造商:Maxim Integrated 类型: 存储容量:1024 bit 组织:1 K x 1 接口类型: 工作电流:5 uA 编程电压: 工作电源电压:2.8 V to 6 V 最大工作温度:+ 85 C 安装风格:Through Hole 封装 / 箱体:TO-92
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