参数资料
型号: AT27C512R-20DC
英文描述: x8 EPROM
中文描述: x8存储器
文件页数: 8/16页
文件大小: 156K
代理商: AT27C512R-20DC
AT27C010(L)
8
Rapid Programming Algorithm
A 100
μ
s PGM pulse width is used to program. The
address is set to the first location. V
CC
is raised to 6.5V and
V
PP
is raised to 13.0V. Each address is first programmed
with one 100
μ
s PGM pulse without verification. Then a
verification / reprogramming loop is executed for each
address. In the event a byte fails to pass verification, up to
10 successive 100
μ
s pulses are applied with a verification
after each pulse. If the byte fails to verify after 10 pulses
have been applied, the part is considered failed. After the
byte verifies properly, the next address is selected until all
have been checked. V
PP
is then lowered to 5.0V and V
CC
to
5.0V. All bytes are read again and compared with the origi-
nal data to determine if the device passes or fails.
相关PDF资料
PDF描述
AT27C512R-20DI x8 EPROM
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AT27C512R-25TC x8 EPROM
相关代理商/技术参数
参数描述
AT27C512R-20DM/883C 制造商:Atmel Corporation 功能描述:
AT27C512R-20LC 制造商:Atmel Corporation 功能描述:EPROM UV 512KBIT 64KX8 200NS 32PLCC - Rail/Tube
AT27C512R-20LI 制造商:Atmel Corporation 功能描述:EPROM UV 512KBIT 64KX8 200NS 32CLCC - Rail/Tube
AT27C512R-25JI 制造商:Atmel Corporation 功能描述:64 X 8 RAPID EPROM IND PLCC - Rail/Tube
AT27C512R-25LI 制造商:Atmel Corporation 功能描述:64KX8 EPROM 250NS IND LCC - Rail/Tube