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参数资料
| 型号： | AT28BV256-25SI |
| 元件分类： | EEPROM |
| 英文描述： | 128Kx8 EEPROM |
| 中文描述： | 128Kx8 EEPROM |
| 文件页数： | 5/12页 |
| 文件大小： | 285K |
| 代理商： | AT28BV256-25SI |
AT28BV256
2
The AT28BV256 is accessed like a Static RAM for the read
or write cycle without the need for external components.
The device contains a 64-byte page register to allow writing
of up to 64 bytes simultaneously. During a write cycle, the
addresses and 1 to 64 bytes of data are internally latched,
freeing the address and data bus for other operations. Fol-
lowing the initiation of a write cycle, the device will automat-
ically write the latched data using an internal control timer.
The end of a write cycle can be detected by DATA polling
of I/O7. Once the end of a write cycle has been detected a
new access for a read or write can begin.
Atmel’s 28BV256 has additional features to ensure high
quality and manufacturability. The device utilizes internal
error correction for extended endurance and improved data
retention characteristics. An optional software data protec-
tion mechanism is available to guard against inadvertent
writes. The device also includes an extra 64 bytes of
EEPROM for device identification or tracking.
Block Diagram
Absolute Maximum Ratings*
Temperature under Bias ................................ -55°C to +125°C
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability
Storage Temperature ..................................... -65°C to +150°C
All Input Voltages (including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to VCC + 0.6V
Voltage on OE and A9
with Respect to Ground ...................................-0.6V to +13.5V
相关PDF资料 |
PDF描述 |
|---|---|
| AT28BV256-25TC | 128Kx8 EEPROM |
| AT28BV256-25TI | 128Kx8 EEPROM |
| AT28C010-12FC | 128Kx8 EEPROM |
| AT28C010-12FI | 128Kx8 EEPROM |
| AT28C010-12FM | 128Kx8 EEPROM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT28BV256-25TC | 功能描述:电可擦除可编程只读存储器 256K 2.7V - 3.6V SDP- 250NS COM TEMP RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| AT28BV256-25TI | 功能描述:电可擦除可编程只读存储器 256K 2.7V - 3.6V SDP- 250NS IND TEMP RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| AT28BV64 | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:64K 8K x 8 Battery-Voltage CMOS E2PROM |
| AT28BV64-20SC | 功能描述:IC EEPROM 64KBIT 200NS 28SOIC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:32 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:1M (128K x 8) 速度:120ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:32-LCC（J 形引线） 供应商设备封装:32-PLCC 包装:管件 其它名称:AT49BV00112JC |
| AT28BV64-20TI | 功能描述:IC EEPROM 64KBIT 200NS 28TSOP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:32 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:1M (128K x 8) 速度:120ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:32-LCC（J 形引线） 供应商设备封装:32-PLCC 包装:管件 其它名称:AT49BV00112JC |
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