参数资料
型号: AT28C010-15TA
厂商: Atmel
文件页数: 1/16页
文件大小: 0K
描述: IC EEPROM 1MBIT 150NS 32TSOP
标准包装: 156
格式 - 存储器: EEPROMs - 并行
存储器类型: EEPROM
存储容量: 1M (128K x 8)
速度: 150ns
接口: 并联
电源电压: 4.5 V ~ 5.5 V
工作温度: -40°C ~ 125°C
封装/外壳: 32-TFSOP(0.724",18.40mm 宽)
供应商设备封装: 32-TSOP
包装: 托盘
Features
? Fast Read Access Time – 120 ns
? Automatic Page Write Operation
– Internal Address and Data Latches for 128 Bytes
– Internal Control Timer
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Fast Write Cycle Time
– Page Write Cycle Time – 10 ms Maximum
– 1 to 128-byte Page Write Operation
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Low Power Dissipation
– 40 mA Active Current
– 200 μA CMOS Standby Current
Hardware and Software Data Protection
DATA Polling for End of Write Detection
High Reliability CMOS Technology
– Endurance: 10 4 or 10 5 Cycles
– Data Retention: 10 Years
Single 5V ± 10% Supply
CMOS and TTL Compatible Inputs and Outputs
JEDEC Approved Byte-wide Pinout
Industrial Temperature Ranges
Green (Pb/Halide-free) Packaging Option Only
1-megabit
(128K x 8)
Paged Parallel
EEPROM
AT28C010
1. Description
The AT28C010 is a high-performance electrically-erasable and programmable read-
only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Man-
ufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers
access times to 120 ns with power dissipation of just 220 mW. When the device is
deselected, the CMOS standby current is less than 200 μA.
The AT28C010 is accessed like a Static RAM for the read or write cycle without the
need for external components. The device contains a 128-byte page register to allow
writing of up to 128 bytes simultaneously. During a write cycle, the address and 1 to
128 bytes of data are internally latched, freeing the address and data bus for other
operations. Following the initiation of a write cycle, the device will automatically write
the latched data using an internal control timer. The end of a write cycle can be
detected by DATA polling of I/O7. Once the end of a write cycle has been detected a
new access for a read or write can begin.
Atmel’s AT28C010 has additional features to ensure high quality and manufacturabil-
ity. The device utilizes internal error correction for extended endurance and improved
data retention characteristics. An optional software data protection mechanism is
available to guard against inadvertent writes. The device also includes an extra
128 bytes of EEPROM for device identification or tracking.
0353I–PEEPR–08/09
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AT28C010-15TC 功能描述:电可擦除可编程只读存储器 1M 5V SDP- 150NS COM TEMP RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
AT28C010-15TI 功能描述:电可擦除可编程只读存储器 1M 5V SDP - 150NS IND TEMP RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
AT28C010-15TU 功能描述:电可擦除可编程只读存储器 1M 5V SDP - 150NS IND TEMP RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
AT28C010-15TU SL383 制造商:Atmel Corporation 功能描述:EEPROM PARALLEL 1MBIT 128KX8 5V 32TSOP - Tape and Reel
AT28C010-15TU-T 功能描述:150NS, TSOP, IND TEMP, GREEN 制造商:microchip technology 系列:- 包装:剪切带(CT) 零件状态:在售 存储器类型:非易失 存储器格式:EEPROM 技术:EEPROM 存储容量:1Mb (128K x 8) 写周期时间 - 字,页:10ms 访问时间:150ns 存储器接口:并联 电压 - 电源:4.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C(TC) 安装类型:表面贴装 封装/外壳:32-TFSOP(0.724",18.40mm 宽) 供应商器件封装:32-TSSOP 标准包装:1