参数资料
| 型号： | AT28C010-20PI |
| 厂商： | Atmel |
| 文件页数： | 3/16页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 1MBIT 200NS 32DIP |
| 标准包装： | 12 |
| 格式 - 存储器： | EEPROMs - 并行 |
| 存储器类型： | EEPROM |
| 存储容量： | 1M (128K x 8) |
| 速度： | 200ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 32-DIP（0.600"，15.24mm） |
| 供应商设备封装： | 32-DIP |
| 包装： | 管件 |
| 其它名称： | AT28C01020PI |
AT28C010
3. Block Diagram
4. Device Operation
4.1
4.2
4.3
4.4
Read
Byte Write
Page Write
DATA Polling
The AT28C010 is accessed like a Static RAM. When CE and OE are low and WE is high, the
data stored at the memory location determined by the address pins is asserted on the outputs.
The outputs are put in the high impedance state when either CE or OE is high. This dual-line
control gives designers flexibility in preventing bus contention in their system.
A low pulse on the WE or CE input with CE or WE low (respectively) and OE high initiates a write
cycle. The address is latched on the falling edge of CE or WE, whichever occurs last. The data is
latched by the first rising edge of CE or WE. Once a byte write has been started it will automati-
cally time itself to completion. Once a programming operation has been initiated and for the
duration of t WC , a read operation will effectively be a polling operation.
The page write operation of the AT28C010 allows 1 to 128 bytes of data to be written into the
device during a single internal programming period. A page write operation is initiated in the
same manner as a byte write; the first byte written can then be followed by 1 to 127 additional
bytes. Each successive byte must be written within 150 μs (t BLC ) of the previous byte. If the t BLC
limit is exceeded the AT28C010 will cease accepting data and commence the internal program-
ming operation. All bytes during a page write operation must reside on the same page as
defined by the state of the A7 - A16 inputs. For each WE high to low transition during the page
write operation, A7 - A16 must be the same.
The A0 to A6 inputs are used to specify which bytes within the page are to be written. The bytes
may be loaded in any order and may be altered within the same load period. Only bytes which
are specified for writing will be written; unnecessary cycling of other bytes within the page does
not occur.
The AT28C010 features DATA Polling to indicate the end of a write cycle. During a byte or page
write cycle an attempted read of the last byte written will result in the complement of the written
data to be presented on I/O 7 . Once the write cycle has been completed, true data is valid on all
outputs, and the next write cycle may begin. DATA Polling may begin at anytime during the write
cycle.
3
0353I–PEEPR–08/09
相关PDF资料 |
PDF描述 |
|---|---|
| AT28C010-20JI | IC EEPROM 1MBIT 200NS 32PLCC |
| 346-012-500-804 | CARDEDGE 12POS DUAL .125 GREEN |
| 346-012-500-802 | CARDEDGE 12POS DUAL .125 GREEN |
| 346-012-500-204 | CARDEDGE 12POS DUAL .125 GREEN |
| 346-012-500-202 | CARDEDGE 12POS DUAL .125 GREEN |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT28C010-20SI | 功能描述:IC EEPROM 1MBIT 200NS 32SOIC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并联 电源电压:2.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 |
| AT28C010-20TC | 功能描述:电可擦除可编程只读存储器 1M 5V SDP - 200NS COM TEMP RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| AT28C010-20TI | 功能描述:电可擦除可编程只读存储器 1M 5V SDP - 200NS IND TEMP RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| AT28C010-20UC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 EEPROM |
| AT28C010-20UI | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 EEPROM |
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