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参数资料
| 型号： | AT28C010E-20TI |
| 厂商： | Atmel |
| 文件页数： | 1/16页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 1MBIT 200NS 32TSOP |
| 标准包装： | 156 |
| 格式 - 存储器： | EEPROMs - 并行 |
| 存储器类型： | EEPROM |
| 存储容量： | 1M (128K x 8) |
| 速度： | 200ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 32-TFSOP（0.724"，18.40mm 宽） |
| 供应商设备封装： | 32-TSOP |
| 包装： | 托盘 |
| 其它名称： | AT28C010E20TI |
Features
? Fast Read Access Time – 120 ns
? Automatic Page Write Operation
– Internal Address and Data Latches for 128 Bytes
– Internal Control Timer
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Fast Write Cycle Time
– Page Write Cycle Time – 10 ms Maximum
– 1 to 128-byte Page Write Operation
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Low Power Dissipation
– 40 mA Active Current
– 200 μA CMOS Standby Current
Hardware and Software Data Protection
DATA Polling for End of Write Detection
High Reliability CMOS Technology
– Endurance: 10 4 or 10 5 Cycles
– Data Retention: 10 Years
Single 5V ± 10% Supply
CMOS and TTL Compatible Inputs and Outputs
JEDEC Approved Byte-wide Pinout
Industrial Temperature Ranges
Green (Pb/Halide-free) Packaging Option Only
1-megabit
(128K x 8)
Paged Parallel
EEPROM
AT28C010
1. Description
The AT28C010 is a high-performance electrically-erasable and programmable read-
only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Man-
ufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers
access times to 120 ns with power dissipation of just 220 mW. When the device is
deselected, the CMOS standby current is less than 200 μA.
The AT28C010 is accessed like a Static RAM for the read or write cycle without the
need for external components. The device contains a 128-byte page register to allow
writing of up to 128 bytes simultaneously. During a write cycle, the address and 1 to
128 bytes of data are internally latched, freeing the address and data bus for other
operations. Following the initiation of a write cycle, the device will automatically write
the latched data using an internal control timer. The end of a write cycle can be
detected by DATA polling of I/O7. Once the end of a write cycle has been detected a
new access for a read or write can begin.
Atmel’s AT28C010 has additional features to ensure high quality and manufacturabil-
ity. The device utilizes internal error correction for extended endurance and improved
data retention characteristics. An optional software data protection mechanism is
available to guard against inadvertent writes. The device also includes an extra
128 bytes of EEPROM for device identification or tracking.
0353I–PEEPR–08/09
相关PDF资料 |
PDF描述 |
|---|---|
| AT28C16E-15SC | IC EEPROM 16KBIT 150NS 24SOIC |
| AT28C17E-15SI | IC EEPROM 16KBIT 150NS 28SOIC |
| AT28C256E-15TI | IC EEPROM 256KBIT 150NS 28TSOP |
| AT28C64B-15SU | IC EEPROM 64KBIT 150NS 28SOIC |
| AT28C64E-25TI | IC EEPROM 64KBIT 250NS 28TSOP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT28C010E-20UM/883 | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:1 Megabit 128K x 8 Paged CMOS E2PROM |
| AT28C010E-25BM/883 | 制造商:Atmel Corporation 功能描述:250NS SDBRZ 883C, LEV B COMPLIANT - Rail/Tube |
| AT28C010E-25DM/883 | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:1 Megabit 128K x 8 Paged CMOS E2PROM |
| AT28C010E-25EM/883 | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:1-Megabit (128K x 8) Paged Parallel EEPROMs |
| AT28C010E-25LM/883 | 功能描述:电可擦除可编程只读存储器 Parallel 电可擦除可编程只读存储器 5V-200NS, 883c RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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