参数资料
| 型号： | AT28C256-15PU |
| 厂商： | Atmel |
| 文件页数： | 1/25页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 256KBIT 150NS 28DIP |
| 标准包装： | 14 |
| 格式 - 存储器： | EEPROMs - 并行 |
| 存储器类型： | EEPROM |
| 存储容量： | 256K (32K x 8) |
| 速度： | 150ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 28-DIP（0.600"，15.24mm） |
| 供应商设备封装： | 28-PDIP |
| 包装： | 管件 |
| 产品目录页面： | 1458 (CN2011-ZH PDF) |
Features
? Fast Read Access Time – 150 ns
? Automatic Page Write Operation
– Internal Address and Data Latches for 64 Bytes
– Internal Control Timer
?
Fast Write Cycle Times
– Page Write Cycle Time: 3 ms or 10 ms Maximum
– 1 to 64-byte Page Write Operation
?
?
?
?
?
?
?
?
?
Low Power Dissipation
– 50 mA Active Current
– 200 μA CMOS Standby Current
Hardware and Software Data Protection
DATA Polling for End of Write Detection
High Reliability CMOS Technology
– Endurance: 10 4 or 10 5 Cycles
– Data Retention: 10 Years
Single 5V ± 10% Supply
CMOS and TTL Compatible Inputs and Outputs
JEDEC Approved Byte-wide Pinout
Full Military and Industrial Temperature Ranges
Green (Pb/Halide-free) Packaging Option
256K (32K x 8)
Paged Parallel
EEPROM
AT28C256
1. Description
The AT28C256 is a high-performance electrically erasable and programmable read-
only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufac-
tured with Atmel’s advanced nonvolatile CMOS technology, the device offers access
times to 150 ns with power dissipation of just 440 mW. When the device is deselected,
the CMOS standby current is less than 200 μA.
The AT28C256 is accessed like a Static RAM for the read or write cycle without the
need for external components. The device contains a 64-byte page register to allow
writing of up to 64 bytes simultaneously. During a write cycle, the addresses and 1 to
64 bytes of data are internally latched, freeing the address and data bus for other
operations. Following the initiation of a write cycle, the device will automatically write
the latched data using an internal control timer. The end of a write cycle can be
detected by DATA Polling of I/O7. Once the end of a write cycle has been detected a
new access for a read or write can begin.
Atmel’s AT28C256 has additional features to ensure high quality and manufacturabil-
ity. The device utilizes internal error correction for extended endurance and improved
data retention characteristics. An optional software data protection mechanism is
available to guard against inadvertent writes. The device also includes an extra
64 bytes of EEPROM for device identification or tracking.
0006M–PEEPR–12/09
相关PDF资料 |
PDF描述 |
|---|---|
| XC5VFX70T-2FFG665C | IC FPGA VIRTEX-5FX 70K 665-FCBGA |
| XC5VSX50T-2FFG1136C | IC FPGA VIRTEX-5 50K 1136FBGA |
| XC5VSX50T-2FF1136C | IC FPGA VIRTEX-5 50K 1136FBGA |
| XC6VLX130T-2FF1156C | IC FPGA VIRTEX 6 128K 1156FFBGA |
| XC6VLX130T-2FFG1156C | IC FPGA VIRTEX 6 128K 1156FFGBGA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT28C256-15PU-ND | 制造商:Omron Electronic Components LLC 功能描述:IC EEPROM 256k 50NS 28DIP |
| AT28C256-15SA | 功能描述:IC EEPROM 256KBIT 150NS 28SOIC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA（7x7） 包装:托盘 |
| AT28C256-15SC | 功能描述:电可擦除可编程只读存储器 256K 11MIL GRIND - 150NS COM TEMP RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| AT28C256-15SI | 功能描述:电可擦除可编程只读存储器 256K 11MIL GRIND - 150NS IND TEMP RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| AT28C256-15SI SL383 | 制造商:Atmel Corporation 功能描述:EEPROM Parallel 256K-Bit 32K x 8 5V 28-Pin SOIC T/R |
发布紧急采购，3分钟左右您将得到回复。