参数资料
| 型号： | AT28C256E-15JU |
| 厂商： | Atmel |
| 文件页数： | 1/25页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 256KBIT 150NS 32PLCC |
| 标准包装： | 32 |
| 格式 - 存储器： | EEPROMs - 并行 |
| 存储器类型： | EEPROM |
| 存储容量： | 256K (32K x 8) |
| 速度： | 150ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 32-LCC（J 形引线） |
| 供应商设备封装： | 32-PLCC |
| 包装： | 管件 |
| 产品目录页面： | 1458 (CN2011-ZH PDF) |
Features
? Fast Read Access Time – 150 ns
? Automatic Page Write Operation
– Internal Address and Data Latches for 64 Bytes
– Internal Control Timer
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Fast Write Cycle Times
– Page Write Cycle Time: 3 ms or 10 ms Maximum
– 1 to 64-byte Page Write Operation
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Low Power Dissipation
– 50 mA Active Current
– 200 μA CMOS Standby Current
Hardware and Software Data Protection
DATA Polling for End of Write Detection
High Reliability CMOS Technology
– Endurance: 10 4 or 10 5 Cycles
– Data Retention: 10 Years
Single 5V ± 10% Supply
CMOS and TTL Compatible Inputs and Outputs
JEDEC Approved Byte-wide Pinout
Full Military and Industrial Temperature Ranges
Green (Pb/Halide-free) Packaging Option
256K (32K x 8)
Paged Parallel
EEPROM
AT28C256
1. Description
The AT28C256 is a high-performance electrically erasable and programmable read-
only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufac-
tured with Atmel’s advanced nonvolatile CMOS technology, the device offers access
times to 150 ns with power dissipation of just 440 mW. When the device is deselected,
the CMOS standby current is less than 200 μA.
The AT28C256 is accessed like a Static RAM for the read or write cycle without the
need for external components. The device contains a 64-byte page register to allow
writing of up to 64 bytes simultaneously. During a write cycle, the addresses and 1 to
64 bytes of data are internally latched, freeing the address and data bus for other
operations. Following the initiation of a write cycle, the device will automatically write
the latched data using an internal control timer. The end of a write cycle can be
detected by DATA Polling of I/O7. Once the end of a write cycle has been detected a
new access for a read or write can begin.
Atmel’s AT28C256 has additional features to ensure high quality and manufacturabil-
ity. The device utilizes internal error correction for extended endurance and improved
data retention characteristics. An optional software data protection mechanism is
available to guard against inadvertent writes. The device also includes an extra
64 bytes of EEPROM for device identification or tracking.
0006M–PEEPR–12/09
相关PDF资料 |
PDF描述 |
|---|---|
| AT28C256-15TU | IC EEPROM 256KBIT 150NS 28TSOP |
| AT28C256F-15JU | IC EEPROM 256KBIT 150NS 32PLCC |
| AT28BV256-20JU | IC EEPROM 256KBIT 200NS 32PLCC |
| AT28C256-15JU | IC EEPROM 256KBIT 150NS 32PLCC |
| AT27C040-70PU | IC OTP 4MBIT 70NS 32DIP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT28C256E-15JU SL383 | 制造商:Atmel Corporation 功能描述:EEPROM Parallel 256K-bit 32K x 8 5V 32-Pin PLCC T/R 制造商:Atmel Corporation 功能描述:EEPROM PARALLEL 256KBIT 32KX8 5V 32PLCC - Tape and Reel 制造商:Atmel 功能描述:EEPROM Parallel 256K-bit 32K x 8 5V 32-Pin PLCC T/R |
| AT28C256E-15JU | 制造商:Atmel Corporation 功能描述:Parallel EEPROM IC |
| AT28C256E-15JUSL383 | 制造商:Atmel Corporation 功能描述:EEPROM Parallel 256K-bit 32K x 8 5V 32-Pin PLCC T/R |
| AT28C256E-15JU-T | 功能描述:IC EEPROM 256KBIT 150NS 32PLCC 制造商:microchip technology 系列:- 包装:剪切带（CT） 零件状态:在售 存储器类型:非易失 存储器格式:EEPROM 技术:EEPROM 存储容量:256Kb （32K x 8） 写周期时间 - 字，页:10ms 访问时间:150ns 存储器接口:并联 电压 - 电源:4.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C（TC） 安装类型:表面贴装 封装/外壳:32-LCC（J 形引线） 供应商器件封装:32-PLCC（11.43x13.97） 标准包装:1 |
| AT28C256E-15LC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 EEPROM |
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