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参数资料
| 型号： | AT28C64B-15TI |
| 厂商： | ATMEL CORP |
| 元件分类： | DRAM |
| 英文描述： | Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-BGA MICROSTAR JUNIOR -40 to 85 |
| 中文描述： | 8K X 8 EEPROM 5V, 150 ns, PDSO28 |
| 封装： | 8 X 13.40 MM, PLASTIC, MO-183, TSOP1-28 |
| 文件页数： | 2/13页 |
| 文件大小： | 317K |
| 代理商： | AT28C64B-15TI |
AT28C64B
2
The AT28C64B is accessed like a Static RAM for the read
or write cycle without the need for external components.
The device contains a 64-byte page register to allow writing
of up to 64 bytes simultaneously. During a write cycle, the
addresses and 1 to 64 bytes of data are internally latched,
freeing the address and data bus for other operations. Fol-
lowing the initiation of a write cycle, the device will automat-
ically write the latched data using an internal control timer.
The end of a write cycle can be detected by DATA POLL-
ING of I/O
7
. Once the end of a write cycle has been
detected, a new access for a read or write can begin.
Atmel
’
s AT28C64B has additional features to ensure high
quality and manufacturability. The device utilizes internal
error correction for extended endurance and improved data
retention characteristics. An optional software data protec-
tion mechanism is available to guard against inadvertent
writes. The device also includes an extra 64 bytes of
EEPROM for device identification or tracking.
Block Diagram
Absolute Maximum Ratings*
Temperature Under Bias................................ -55
°
C to +125
°
C
*NOTICE:
Stresses beyond those listed under
“
Absolute
Maximum Ratings
”
may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability
Storage Temperature..................................... -65
°
C to +150
°
C
All Input Voltages
(including NC Pins)
with Respect to Ground...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground.............................-0.6V to V
CC
+ 0.6V
Voltage on OE and A9
with Respect to Ground...................................-0.6V to +13.5V
相关PDF资料 |
PDF描述 |
|---|---|
| AT28C64B-20 | 8-Bit Shift Registers With Output Registers 16-SSOP -40 to 85 |
| AT28C64B-20JC | 8-Bit Shift Registers With Output Registers 16-SSOP -40 to 85 |
| AT28C64B-20JI | 8-Bit Shift Registers With Output Registers 16-SOIC -40 to 85 |
| AT28C64B-20PC | 8-Bit Shift Registers With Output Registers 16-SOIC -40 to 85 |
| AT28C64E-12JC | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT28C64B-15TI SL383 | 制造商:Atmel Corporation 功能描述:EEPROM Parallel 64K-Bit 8K x 8 5V 28-Pin TSOP-I T/R |
| AT28C64B-15TU | 功能描述:电可擦除可编程只读存储器 64K 8K x 8 150 ns 4.5V-5.5V RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| AT28C64B-15TU SL383 | 制造商:Atmel Corporation 功能描述:EEPROM PARALLEL 64KBIT 8KX8 5V 28TSOP-I - Tape and Reel |
| AT28C64B-15TU-T | 功能描述:150NS, TSOP, IND TEMP, GREEN 制造商:microchip technology 系列:- 包装:剪切带（CT） 零件状态:在售 存储器类型:非易失 存储器格式:EEPROM 技术:EEPROM 存储容量:64Kb （8K x 8） 写周期时间 - 字，页:10ms 访问时间:150ns 存储器接口:并联 电压 - 电源:4.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C（TC） 安装类型:表面贴装 封装/外壳:28-TSSOP（0.465"，11.80mm 宽） 供应商器件封装:28-TSOP 标准包装:1 |
| AT28C64B-15UM/883 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 EEPROM |
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