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参数资料
| 型号： | AT28C64B-W |
| 厂商： | ATMEL CORP |
| 元件分类： | DRAM |
| 英文描述： | 8-Bit Shift Registers With 3-State Output Registers 16-TSSOP -40 to 85 |
| 中文描述： | 8K X 8 EEPROM 5V, 250 ns, UUC26 |
| 文件页数： | 2/13页 |
| 文件大小： | 317K |
| 代理商： | AT28C64B-W |
AT28C64B
2
The AT28C64B is accessed like a Static RAM for the read
or write cycle without the need for external components.
The device contains a 64-byte page register to allow writing
of up to 64 bytes simultaneously. During a write cycle, the
addresses and 1 to 64 bytes of data are internally latched,
freeing the address and data bus for other operations. Fol-
lowing the initiation of a write cycle, the device will automat-
ically write the latched data using an internal control timer.
The end of a write cycle can be detected by DATA POLL-
ING of I/O
7
. Once the end of a write cycle has been
detected, a new access for a read or write can begin.
Atmel
’
s AT28C64B has additional features to ensure high
quality and manufacturability. The device utilizes internal
error correction for extended endurance and improved data
retention characteristics. An optional software data protec-
tion mechanism is available to guard against inadvertent
writes. The device also includes an extra 64 bytes of
EEPROM for device identification or tracking.
Block Diagram
Absolute Maximum Ratings*
Temperature Under Bias................................ -55
°
C to +125
°
C
*NOTICE:
Stresses beyond those listed under
“
Absolute
Maximum Ratings
”
may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability
Storage Temperature..................................... -65
°
C to +150
°
C
All Input Voltages
(including NC Pins)
with Respect to Ground...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground.............................-0.6V to V
CC
+ 0.6V
Voltage on OE and A9
with Respect to Ground...................................-0.6V to +13.5V
相关PDF资料 |
PDF描述 |
|---|---|
| AT28C64B | 8K x 8 Parallel EEPROM with Page Write and Software Data Protection(8K x 8并行EEPROM带分页写数据保护和软件数据保护) |
| AT28C64B-15 | Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-BGA MICROSTAR JUNIOR -40 to 85 |
| AT28C64B-15JC | Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-SO -40 to 85 |
| AT28C64B-15JI | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| AT28C64B-15PC | Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-TSSOP -40 to 85 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT28C64E | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:64K 8K x 8 CMOS E2PROM |
| AT28C64E-12DC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 EEPROM |
| AT28C64E-12DI | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 EEPROM |
| AT28C64E-12JC | 功能描述:电可擦除可编程只读存储器 64K HI-ENDURANCE w/RDYBSY - 120NS RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| AT28C64E-12JI | 功能描述:电可擦除可编程只读存储器 64K HI-ENDURANCE w/RDYBSY-120NS RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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