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参数资料
| 型号： | AT28C64E-12JI |
| 厂商： | ATMEL CORP |
| 元件分类： | DRAM |
| 英文描述： | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| 中文描述： | 8K X 8 EEPROM 5V, 120 ns, PQCC32 |
| 封装： | PLASTIC, MS-016AE, LCC-32 |
| 文件页数： | 3/11页 |
| 文件大小： | 312K |
| 代理商： | AT28C64E-12JI |
Device Operation
READ:
The AT28C64 is accessed like a Static RAM.
When CE and OE are low and WE is high, the data stored
at the memory location determined by the address pins is
asserted on the outputs. The outputs are put in a high im-
pedance state whenever CE or OE is high. This dual line
control gives designers increased flexibility in preventing
bus contention.
BYTE WRITE:
Writing data into the AT28C64 is similar to
writing into a Static RAM. A low pulse on the WE or CE
input with OE high and CE or WE low (respectively) initi-
ates a byte write. The address location is latched on the
falling edge of WE (or CE); the new data is latched on the
rising edge. Internally, the device performs a self-clear be-
fore write. Once a byte write has been started, it will auto-
matically time itself to completion. Once a programming
operation has been initiated and for the duration of t
WC
, a
read operation will effectively be a polling operation.
FAST BYTE WRITE:
The AT28C64E offers a byte write
time of 200
μ
s maximum. This feature allows the entire
device to be rewritten in 1.6 seconds.
READY/BUSY:
Pin 1 is an open drain READY/BUSY
output that can be used to detect the end of a write cycle.
RDY/BUSY is actively pulled low during the write cycle
and is released at the completion of the write. The open
drain connection allows for OR-tying of several devices to
the same RDY/BUSY line. Pin 1 is not connected for the
AT28C64X.
DATA POLLING:
The AT28C64 provides DATA POLL-
ING to signal the completion of a write cycle. During a
write cycle, an attempted read of the data being written
results in the complement of that data for I/O
7
(the other
outputs are indeterminate). When the write cycle is fin-
ished, true data appears on all outputs.
WRITE PROTECTION:
Inadvertent writes to the device
are protected against in the following ways. (a) V
CC
sense— if V
CC
is below 3.8V (typical) the write function is
inhibited. (b) V
CC
power on delay— once V
CC
has
reached 3.8V the device will automatically time out 5 ms
(typical) before allowing a byte write. (c) Write Inhibit—
holding any one of OE low, CE high or WE high inhibits
byte write cycles.
CHIP CLEAR:
The contents of the entire memory of the
AT28C64 may be set to the high state by the CHIP CLEAR
operation. By setting CE low and OE to 12 volts, the chip
is cleared when a 10 msec low pulse is applied to WE.
DEVICE IDENTIFICATION:
An extra 32-bytes of
E
2
PROM memory are available to the user for device
identification. By raising A9 to 12
±
0.5V and using ad-
dress locations 1FE0H to 1FFFH the additional bytes may
be written to or read from in the same manner as the regu-
lar memory array.
AT28C64/X
2-195
相关PDF资料 |
PDF描述 |
|---|---|
| AT28C64E-12PC | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| AT28C64E-12PI | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| AT28C64E-12SC | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| AT28C64E-12SI | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| AT28C64E-12TC | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT28C64E-12JU | 功能描述:电可擦除可编程只读存储器 64K HI-ENDUR w/RDYBSY - 120NS RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| AT28C64E12PC | 制造商: 功能描述: 制造商:undefined 功能描述: |
| AT28C64E-12PC | 功能描述:电可擦除可编程只读存储器 64K HI-ENDURANCE w/RDYBSY-120NS RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| AT28C64E-12PI | 功能描述:电可擦除可编程只读存储器 64K HI-ENDURANCE w/RDYBSY-120NS RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| AT28C64E-12SC | 功能描述:电可擦除可编程只读存储器 64K HI-ENDURANCE w/RDYBSY - 120NS RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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