参数资料
| 型号： | AT28C64E-12JI |
| 厂商： | Atmel |
| 文件页数： | 2/12页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 64KBIT 120NS 32PLCC |
| 标准包装： | 32 |
| 格式 - 存储器： | EEPROMs - 并行 |
| 存储器类型： | EEPROM |
| 存储容量： | 64K (8K x 8) |
| 速度： | 120ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 32-LCC（J 形引线） |
| 供应商设备封装： | 32-PLCC |
| 包装： | 管件 |
| 其它名称： | AT28C64E12JI |
The AT28C64 is accessed like a Static RAM for the read or
write cycles without the need for external components. Dur-
ing a byte write, the address and data are latched inter-
nally, freeing the microprocessor address and data bus for
other operations. Following the initiation of a write cycle,
the device will go to a busy state and automatically clear
and write the latched data using an internal control timer.
The device includes two methods for detecting the end of a
write cycle, level detection of RDY/BUSY (unless pin 1 is
N.C.) and DATA Polling of I/O 7 . Once the end of a write
Block Diagram
Absolute Maximum Ratings*
cycle has been detected, a new access for a read or write
can begin.
The CMOS technology offers fast access times of 120 ns at
low power dissipation. When the chip is deselected the
standby current is less than 100 μA.
Atmel’s AT28C64 has additional features to ensure high
quality and manufacturability. The device utilizes error cor-
rection internally for extended endurance and for improved
data retention characteristics. An extra 32 bytes of
EEPROM are available for device identification or tracking.
Temperature under Bias ................................ -55 ° C to +125 ° C
Storage Temperature ..................................... -65 ° C to +150 ° C
All Input Voltages (including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to V CC + 0.6V
Voltage on OE and A9
with Respect to Ground ...................................-0.6V to +13.5V
AT28C64(X)
2
*NOTICE:
Stresses beyond those listed under “ Absolute
Maximum Ratings ” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability
相关PDF资料 |
PDF描述 |
|---|---|
| AT28C64E-12JC | IC EEPROM 64KBIT 120NS 32PLCC |
| AT28C64-25TI | IC EEPROM 64KBIT 250NS 28TSOP |
| AT28C64-25TC | IC EEPROM 64KBIT 250NS 28TSOP |
| 395-040-524-201 | CARD EDGE 40POS DL .100X.200 BLK |
| 395-040-523-804 | CARD EDGE 40POS DL .100X.200 BLK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT28C64E-12JU | 功能描述:电可擦除可编程只读存储器 64K HI-ENDUR w/RDYBSY - 120NS RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| AT28C64E12PC | 制造商: 功能描述: 制造商:undefined 功能描述: |
| AT28C64E-12PC | 功能描述:电可擦除可编程只读存储器 64K HI-ENDURANCE w/RDYBSY-120NS RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| AT28C64E-12PI | 功能描述:电可擦除可编程只读存储器 64K HI-ENDURANCE w/RDYBSY-120NS RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| AT28C64E-12SC | 功能描述:电可擦除可编程只读存储器 64K HI-ENDURANCE w/RDYBSY - 120NS RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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