参数资料
型号: AT28HC256-90TU
厂商: Atmel
文件页数: 1/24页
文件大小: 0K
描述: IC EEPROM 256KBIT 90NS 28TSOP
标准包装: 234
格式 - 存储器: EEPROMs - 并行
存储器类型: EEPROM
存储容量: 256K (32K x 8)
速度: 90ns
接口: 并联
电源电压: 4.5 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 28-TSSOP(0.465",11.8mm 宽)
供应商设备封装: 28-TSOP
包装: 托盘
Features
? Fast Read Access Time – 70 ns
? Automatic Page Write Operation
– Internal Address and Data Latches for 64 Bytes
– Internal Control Timer
?
Fast Write Cycle Times
– Page Write Cycle Time: 3 ms or 10 ms Maximum
– 1 to 64-byte Page Write Operation
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Low Power Dissipation
– 80 mA Active Current
– 3 mA Standby Current
Hardware and Software Data Protection
DATA Polling for End of Write Detection
High Reliability CMOS Technology
– Endurance: 10 4 or 10 5 Cycles
– Data Retention: 10 Years
Single 5V ± 10% Supply
CMOS and TTL Compatible Inputs and Outputs
JEDEC Approved Byte-wide Pinout
Full Military and Industrial Temperature Ranges
Green (Pb/Halide-free) Packaging Option
256K (32K x 8)
High-speed
Parallel
EEPROM
AT28HC256
1. Description
The AT28HC256 is a high-performance electrically erasable and programmable read-
only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufac-
tured with Atmel’s advanced nonvolatile CMOS technology, the AT28HC256 offers
access times to 70 ns with power dissipation of just 440 mW. When the AT28HC256
is deselected, the standby current is less than 5 mA.
The AT28HC256 is accessed like a Static RAM for the read or write cycle without the
need for external components. The device contains a 64-byte page register to allow
writing of up to 64 bytes simultaneously. During a write cycle, the address and 1 to 64
bytes of data are internally latched, freeing the addresses and data bus for other oper-
ations. Following the initiation of a write cycle, the device will automatically write the
latched data using an internal control timer. The end of a write cycle can be detected
by DATA Polling of I/O7. Once the end of a write cycle has been detected a new
access for a read or write can begin.
Atmel’s 28HC256 has additional features to ensure high quality and manufacturability.
The device utilizes internal error correction for extended endurance and improved
data retention characteristics. An optional software data protection mechanism is
available to guard against inadvertent writes. The device also includes an extra
64 bytes of EEPROM for device identification or tracking.
0007N–PEEPR–9/09
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