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参数资料
| 型号： | AT28HC64B-70SC |
| 厂商： | ATMEL CORP |
| 元件分类： | DRAM |
| 英文描述： | High Speed CMOS Logic Dual Binary Up-Counters 16-SOIC -55 to 125 |
| 中文描述： | 8K X 8 EEPROM 5V, 70 ns, PDSO28 |
| 封装： | 0.300 INCH, PLASTIC, MS-013, SOIC-28 |
| 文件页数： | 2/12页 |
| 文件大小： | 661K |
| 代理商： | AT28HC64B-70SC |
Block Diagram
writing of up to 64-bytes simultaneously. During a write cy-
cle, the addresses and 1 to 64-bytes of data are internally
latched, freeing the address and data bus for other opera-
tions. Following the initiation of a write cycle, the device
will automatically write the latched data using an internal
control timer. The end of a write cycle can be detected by
DATA Polling of I/O7. Once the end of a write cycle has
been detected, a new access for a read or write can begin.
Atmel’s AT28HC64B has additional features to ensure
high quality and manufacturability. The device utilizes in-
ternal error correction for extended endurance and im-
proved data retention. An optional software data protec-
tion mechanism is available to guard against inadvertent
writes. The device also includes an extra 64-bytes of
EEPROM for device identification or tracking.
Description
(Continued)
Temperature Under Bias.................-55°C to +125°C
Storage Temperature......................-65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ................... -0.6V to +6.25V
All Output Voltages
with Respect to Ground .............-0.6V to V
CC
+ 0.6V
Voltage on OE and A9
with Respect to Ground ................... -0.6V to +13.5V
*NOTICE: Stresses beyond those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the
device at these or any other conditions beyond those indi-
cated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability.
Absolute Maximum Ratings*
2-268
AT28HC64B
相关PDF资料 |
PDF描述 |
|---|---|
| AT28HC64B-70SI | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| AT28HC64B-70TC | High Speed CMOS Logic Dual Binary Up-Counters 16-SOIC -55 to 125 |
| AT28HC64B-120 | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| AT28HC64B-12JC | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| AT28HC64B-12JI | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT28HC64B-70SI | 功能描述:电可擦除可编程只读存储器 1M 5V SDP - 70NS IND TEMP RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| AT28HC64B-70SU | 功能描述:电可擦除可编程只读存储器 PRLLEL 电可擦除可编程只读存储器 64K 8K 70NS SOIC IND TMP GR RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| AT28HC64B-70SUSL383 | 制造商:Adesto Technologies Corporation 功能描述: |
| AT28HC64B-70SU-T | 功能描述:IC EEPROM 64KBIT 70NS 28SOIC 制造商:microchip technology 系列:- 包装:剪切带（CT） 零件状态:在售 存储器类型:非易失 存储器格式:EEPROM 技术:EEPROM 存储容量:64Kb （8K x 8） 写周期时间 - 字，页:10ms 访问时间:70ns 存储器接口:并联 电压 - 电源:4.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C（TC） 安装类型:表面贴装 封装/外壳:28-SOIC（0.295"，7.50mm 宽） 供应商器件封装:28-SOIC 标准包装:1 |
| AT28HC64B-70TC | 功能描述:电可擦除可编程只读存储器 1M 5V SDP- 70NS COM TEMP RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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