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参数资料
| 型号： | AT28HC64B-90SC |
| 厂商： | ATMEL CORP |
| 元件分类： | DRAM |
| 英文描述： | High Speed CMOS Logic Dual Retriggerable Precision Monostable Multivibrators 16-SOIC -55 to 125 |
| 中文描述： | 8K X 8 EEPROM 5V, 90 ns, PDSO28 |
| 封装： | 0.300 INCH, PLASTIC, MS-013, SOIC-28 |
| 文件页数： | 4/12页 |
| 文件大小： | 661K |
| 代理商： | AT28HC64B-90SC |
Symbol
Parameter
Condition
Min
Max
Units
μ
A
μ
A
μ
A
mA
I
LI
I
LO
I
SB1
I
SB2
I
CC
V
IL
V
IH
V
OL
V
OH
Note:
Input Load Current
V
IN
= 0V to V
CC
+ 1V
V
I/O
= 0V to V
CC
CE = V
CC
- 0.3V to V
CC
+ 1V
CE = 2.0V to V
CC
+ 1V
f = 5 MHz; I
OUT
= 0 mA
10
Output Leakage Current
10
V
CC
Standby Current CMOS
V
CC
Standby Current TTL
V
CC
Active Current
Input Low Voltage
Com., Ind.
100
(1)
2
(1)
40
mA
0.8
V
Input High Voltage
2.0
V
Output Low Voltage
I
OL
= 2.1 mA
I
OH
= -400
μ
A
.40
V
Output High Voltage
2.4
V
1. I
SB1
and I
SB2
for the 55 ns part is 40 mA maximum.
DC Characteristics
AT28HC64B-55
AT28HC64B-70
AT28HC64B-90
AT28HC64B-120
Operating
Temperature (Case)
Com.
0°C - 70°C
0°C - 70°C
0°C - 70°C
0°C - 70°C
Ind.
-40°C - 85°C
5V
±
10%
-40°C - 85°C
5V
±
10%
-40°C - 85°C
5V
±
10%
V
CC
Power Supply
5V
±
10%
DC and AC Operating Range
Mode
CE
OE
WE
I/O
Read
Write
(2)
V
IL
V
IL
V
IH
X
V
IL
V
IH
X
(1)
V
IH
V
IL
X
D
OUT
D
IN
High Z
Standby/Write Inhibit
Write Inhibit
X
V
IH
X
Write Inhibit
X
V
IL
V
IH
V
H
(3)
Output Disable
X
X
High Z
Chip Erase
Notes: 1. X can be V
IL
or V
IH
.
2. Refer to the AC Write Waveforms diagrams
in this data sheet.
V
IL
V
IL
High Z
Operating Modes
3. V
H
= 12.0V
±
0.5V.
DEVICE IDENTIFICATION:
An extra 64-bytes of
EEPROM memory are available to the user for device
identification. By raising A9 to 12V
±
0.5V and using ad-
dress locations 1FC0H to 1FFFH, the additional bytes
may be written to or read from in the same manner as the
regular memory array.
Device Operation
(Continued)
2-270
AT28HC64B
相关PDF资料 |
PDF描述 |
|---|---|
| AT28HC64B-90SI | High Speed CMOS Logic Dual Retriggerable Precision Monostable Multivibrators 16-SOIC -55 to 125 |
| AT28HC64B-90TC | High Speed CMOS Logic Dual Retriggerable Precision Monostable Multivibrators 16-SOIC -55 to 125 |
| AT28HC64B-90TI | High Speed CMOS Logic Dual Retriggerable Precision Monostable Multivibrators 16-SOIC -55 to 125 |
| AT28HC64B-12TC | High Speed CMOS Logic 4-to-16 Line Decoder/Demultiplexer with Input Latches 24-SOIC -55 to 125 |
| AT28HC64B-12TI | High Speed CMOS Logic 4-to-16 Line Decoder/Demultiplexer with Input Latches 24-SOIC -55 to 125 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT28HC64B-90SI | 功能描述:电可擦除可编程只读存储器 1M 5V SDP - 90NS IND TEMP RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| AT28HC64B-90SU | 功能描述:电可擦除可编程只读存储器 1M 5V SDP - 90NS IND TEMP RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| AT28HC64B-90SU SL383 | 制造商:Atmel Corporation 功能描述:EEPROM PARALLEL 64KBIT 8KX8 5V 28SOIC - Tape and Reel |
| AT28HC64B-90SU-T | 功能描述:90NS, SOIC, IND TEMP, GREEN 制造商:microchip technology 系列:- 包装:剪切带（CT） 零件状态:在售 存储器类型:非易失 存储器格式:EEPROM 技术:EEPROM 存储容量:64Kb （8K x 8） 写周期时间 - 字，页:10ms 访问时间:90ns 存储器接口:并联 电压 - 电源:4.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C（TC） 安装类型:表面贴装 封装/外壳:28-SOIC（0.295"，7.50mm 宽） 供应商器件封装:28-SOIC 标准包装:1 |
| AT28HC64B-90TA | 功能描述:IC EEPROM 64KBIT 90NS 28TSOP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA（7x7） 包装:托盘 |
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