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参数资料
| 型号： | AT28LV010-25 |
| 厂商： | Atmel Corp. |
| 元件分类： | DRAM |
| 英文描述： | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| 中文描述： | 64K的8K的× 8电池电压的CMOS E2PROM的 |
| 文件页数： | 2/9页 |
| 文件大小： | 498K |
| 代理商： | AT28LV010-25 |
Block Diagram
Temperature Under Bias.................-55°C to +125°C
Storage Temperature......................-65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ................... -0.6V to +6.25V
All Output Voltages
with Respect to Ground .............-0.6V to V
CC
+ 0.6V
Voltage on OE and A9
with Respect to Ground ................... -0.6V to +13.5V
*NOTICE: Stresses beyond those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the
device at these or any other conditions beyond those indi-
cated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability.
Absolute Maximum Ratings*
The AT28LV010 is accessed like a Static RAM for the
read or write cycle without the need for external compo-
nents. The device contains a 128-byte page register to al-
low writing of up to 128-bytes simultaneously. During a
write cycle, the address and 1 to 128-bytes of data are
internally latched, freeing the address and data bus for
other operations. Following the initiation of a write cycle,
the device will automatically write the latched data using
an internal control timer. The end of a write cycle can be
detected by DATA polling of I/O7. Once the end of a write
cycle has been detected a new access for a read or write
can begin.
Atmel’s 28LV010 has additional features to ensure high
quality and manufacturability. The device utilizes internal
error correction for extended endurance and improved
data retention characteristics. Software data protection is
implemented to guard against inadvertent writes. The de-
vice also includes an extra 128-bytes of E
2
PROM for de-
vice identification or tracking.
Description
(Continued)
2-156
AT28LV010
相关PDF资料 |
PDF描述 |
|---|---|
| AT28LV010-25JC | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| AT28LV010-25JI | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| AT28LV010-25PC | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| AT28LV010-25PI | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| AT28LV010-25TC | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT28LV010-25JC | 功能描述:电可擦除可编程只读存储器 1M 3V SDP- 250NS COM TEMP RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| AT28LV010-25JI | 功能描述:电可擦除可编程只读存储器 1M 3V SDP- 250NS IND TEMP RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| AT28LV010-25PC | 功能描述:电可擦除可编程只读存储器 1M 3V SDP- 250NS COM TEMP RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| AT28LV010-25PI | 功能描述:电可擦除可编程只读存储器 1M 3V SDP- 250NS IND TEMP RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| AT28LV010-25SC | 功能描述:IC EEPROM 1MBIT 250NS 32SOIC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:32 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:1M (128K x 8) 速度:120ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:32-LCC（J 形引线） 供应商设备封装:32-PLCC 包装:管件 其它名称:AT49BV00112JC |
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