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参数资料
| 型号： | AT41435-3 |
| 厂商： | ADVANCED SEMICONDUCTOR INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | 0.100 INCH, PILL PACKAGE-4 |
| 文件页数： | 1/1页 |
| 文件大小： | 64K |
| 代理商： | AT41435-3 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS T
C = 25
OC
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
ICBO
VCB = 8.0 V
200
nA
IEBO
VEB = 1.0 V
1.0
A
hFE
VCE = 8.0 V
IC = 10 mA
30
100
300
---
CCB
VCB = 8.0 V
f = 1.0 MHz
0.18
pF
P1dB
VCE = 8.0 V
IC = 25 mA
f = 4.0 GHz
19.0
dBm
G1dB
VCE = 8.0 V
IC = 25 mA
f = 4.0 GHz
9.5
dB
MAG
VCE = 8.0 V
IC = 10 mA
f = 2.0 GHz
16
dB
GA
VCE = 8.0 V
IC = 10 mA
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
13.0
19.0
14.0
10.0
dB
NFO
VCE = 8.0 V
IC = 10 mA
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
1.3
1.6
3.0
1.9
dB
NPN SILICON BIPOLAR TRANSISTOR
AT41435-3
DESCRIPTION:
The
ASI AT41435-3 Is a low noise,
high gain, silicon bipolar transistor for
applications up to 6.0 GHz.
MAXIMUM RATINGS
IC
60 mA
VCEO
12 V
VCBO
20 V
VEBO
1.5 V
PDISS
500 mW @ TC = 25°C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +200 °C
PACKAGE STYLE .100 4L PILL
1 = BASE
2 & 4 = EMITTER
3 = COLLECTOR
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