参数资料
型号: AT45DB011B-XI
厂商: Atmel
文件页数: 27/32页
文件大小: 0K
描述: IC FLASH 1MBIT 20MHZ 14TSSOP
标准包装: 96
格式 - 存储器: 闪存
存储器类型: DataFLASH
存储容量: 1M(512 页 x 264 字节)
速度: 20MHz
接口: SPI 3 线串行
电源电压: 2.7 V ~ 3.6 V
工作温度: -40°C ~ 85°C
封装/外壳: 14-TSSOP(0.173",4.40mm 宽)
供应商设备封装: 14-TSSOP
包装: 管件
AT45DB011B
Figure 2. Algorithm for Randomly Modifying Data
START
provide address of
page to modify
MAIN MEMORY PAGE
to BUFFER TRANSFER
(53H)
If planning to modify multiple
bytes currently stored within
a page of the Flash array
BUFFER WRITE
(84H)
MAIN MEMORY PAGE PROGRAM
(82H)
BUFFER to MAIN
MEMORY PAGE PROGRAM
(83H)
(2)
Auto Page Rewrite
(58H)
INCREMENT PAGE
(2)
ADDRESS POINTER
END
Notes:
1. To preserve data integrity, each page of a DataFlash sector must be updated/rewritten at least once within every 10,000
cumulative page erase/program operations within that sector.
2. A Page Address Pointer must be maintained to indicate which page is to be rewritten. The Auto Page Rewrite command
must use the address specified by the Page Address Pointer.
3. Other algorithms can be used to rewrite portions of the Flash array. Low-power applications may choose to wait until 10,000
cumulative page erase/program operations have accumulated before rewriting all pages of the sector. See application note
AN-4 (“Using Atmel’s Serial DataFlash”) for more details.
Sector Addressing
PA8
0
0
1
PA7
0
X
X
PA6
0
X
X
PA5
0
X
X
PA4
0
X
X
PA3
0
X
X
PA2 - PA0
X
X
X
Sector
0
1
2
27
1984J–DFLASH–06/06
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