- 您现在的位置：买卖IC网 > PDF目录381453 > AT45DB041B-CI (ATMEL CORP) 4-megabit 2.5-volt Only or 2.7-volt Only DataFlash PDF资料下载
参数资料
| 型号： | AT45DB041B-CI |
| 厂商： | ATMEL CORP |
| 元件分类： | DRAM |
| 英文描述： | 4-megabit 2.5-volt Only or 2.7-volt Only DataFlash |
| 中文描述： | 4M X 1 FLASH 2.7V PROM, PBGA14 |
| 封装： | 4.50 X 7 MM, 1.40 MM HEIGHT, 1 MM PITCH, PLASTIC, CBGA-14 |
| 文件页数： | 6/33页 |
| 文件大小： | 233K |
| 代理商： | AT45DB041B-CI |
第1页第2页第3页第4页第5页当前第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页
6
AT45DB041B
1938F–DFLSH–10/02
BUFFER TO MAIN MEMORY PAGE PROGRAM WITHOUT BUILT-IN ERASE:
A
previously erased page within main memory can be programmed with the contents of
either buffer 1 or buffer 2. To start the operation, an 8-bit opcode, 88H for buffer 1 or
89H for buffer 2, must be followed by the four reserved bits, 11 address bits
(PA10 - PA0) that specify the page in the main memory to be written, and nine addi-
tional don’t care bits. When a low-to-high transition occurs on the CS pin, the part will
program the data stored in the buffer into the specified page in the main memory. It is
necessary that the page in main memory that is being programmed has been previously
erased. The programming of the page is internally self-timed and should take place in a
maximum time of t
P
. During this time, the status register will indicate that the part is
busy.
Successive page programming operations without doing a page erase are not recom-
mended. In other words, changing bytes within a page from a “1” to a “0” during multiple
page programming operations without erasing that page is not recommended.
PAGE ERASE:
The optional Page Erase command can be used to individually erase
any page in the main memory array allowing the Buffer to Main Memory Page Program
without Built-in Erase command to be utilized at a later time. To perform a Page Erase,
an opcode of 81H must be loaded into the device, followed by four reserved bits,
11 address bits (PA10 - PA0), and nine don’t care bits. The 11 address bits are used to
specify which page of the memory array is to be erased. When a low-to-high transition
occurs on the CS pin, the part will erase the selected page to 1s. The erase operation is
internally self-timed and should take place in a maximum time of t
PE
. During this time,
the status register will indicate that the part is busy.
BLOCK ERASE:
A block of eight pages can be erased at one time allowing the Buffer
to Main Memory Page Program without Built-in Erase command to be utilized to reduce
programming times when writing large amounts of data to the device. To perform a
Block Erase, an opcode of 50H must be loaded into the device, followed by four
reserved bits, eight address bits (PA10 - PA3), and 12 don’t care bits. The eight address
bits are used to specify which block of eight pages is to be erased. When a low-to-high
transition occurs on the CS pin, the part will erase the selected block of eight pages to
1s. The erase operation is internally self-timed and should take place in a maximum
time of t
BE
. During this time, the status register will indicate that the part is busy.
Block Erase Addressing
PA10
PA9
PA8
PA7
PA6
PA5
PA4
PA3
PA2
PA1
PA0
Block
0
0
0
0
0
0
0
0
X
X
X
0
0
0
0
0
0
0
0
1
X
X
X
1
0
0
0
0
0
0
1
0
X
X
X
2
0
0
0
0
0
0
1
1
X
X
X
3
1
1
1
1
1
1
0
0
X
X
X
252
1
1
1
1
1
1
0
1
X
X
X
253
1
1
1
1
1
1
1
0
X
X
X
254
1
1
1
1
1
1
1
1
X
X
X
255
相关PDF资料 |
PDF描述 |
|---|---|
| AT45DB041D | 4-megabit 2.5-volt or 2.7-volt DataFlash |
| AT45DB041D_07 | 4-megabit 2.5-volt or 2.7-volt DataFlash |
| AT45DB041D-MU | 4-megabit 2.5-volt or 2.7-volt DataFlash |
| AT45DB041D-MU-2.5 | 4-megabit 2.5-volt or 2.7-volt DataFlash |
| AT45DB041D-SSU | 4-megabit 2.5-volt or 2.7-volt DataFlash |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT45DB041B-CI-2.5 | 功能描述:IC FLASH 4MBIT 20MHZ 14CBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA（7x7） 包装:托盘 |
| AT45DB041B-CNC | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:4-megabit 2.5-volt or 2.7-volt DataFlash |
| AT45DB041B-CNC-2.5 | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:4-megabit 2.5-volt or 2.7-volt DataFlash |
| AT45DB041B-CNI | 功能描述:IC FLASH 4MBIT 20MHZ 8CASON RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并联 电源电压:2.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 |
| AT45DB041B-CNU | 功能描述:IC FLASH 4MBIT 20MHZ 8CASON RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:RAM 存储器类型:SDRAM 存储容量:256M（8Mx32） 速度:143MHz 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:托盘 其它名称:Q2841869 |
发布紧急采购，3分钟左右您将得到回复。