参数资料
| 型号： | AT45DB041B-RC |
| 厂商： | Atmel |
| 文件页数： | 7/35页 |
| 文件大小： | 0K |
| 描述： | IC FLASH 4MBIT 20MHZ 28SOIC |
| 标准包装： | 26 |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | DataFLASH |
| 存储容量： | 4M（2048 页 x 264 字节） |
| 速度： | 20MHz |
| 接口： | SPI 3 线串行 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 28-SOIC（0.342"，8.69mm 宽） |
| 供应商设备封装： | 28-SOIC W |
| 包装： | 管件 |
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AT45DB041B
Successive page programming operations without doing a page erase are not recommended. In
other words, changing bytes within a page from a “1” to a “0” during multiple page programming
operations without erasing that page is not recommended.
5.2.4
5.2.5
Page Erase
Block Erase
The optional Page Erase command can be used to individually erase any page in the main
memory array allowing the Buffer to Main Memory Page Program without Built-in Erase com-
mand to be utilized at a later time. To perform a Page Erase, an opcode of 81H must be loaded
into the device, followed by four reserved bits, 11 address bits (PA10 - PA0), and nine don’t care
bits. The 11 address bits are used to specify which page of the memory array is to be erased.
When a low-to-high transition occurs on the CS pin, the part will erase the selected page to 1s.
The erase operation is internally self-timed and should take place in a maximum time of t PE . Dur-
ing this time, the status register will indicate that the part is busy.
A block of eight pages can be erased at one time allowing the Buffer to Main Memory Page Pro-
gram without Built-in Erase command to be utilized to reduce programming times when writing
large amounts of data to the device. To perform a Block Erase, an opcode of 50H must be
loaded into the device, followed by four reserved bits, eight address bits (PA10 - PA3), and 12
don’t care bits. The eight address bits are used to specify which block of eight pages is to be
erased. When a low-to-high transition occurs on the CS pin, the part will erase the selected
block of eight pages to 1s. The erase operation is internally self-timed and should take place in a
maximum time of t BE . During this time, the status register will indicate that the part is busy.
Table 5-2.
Block Erase Addressing
PA10
0
0
0
0
?
?
?
1
1
1
1
PA9
0
0
0
0
?
?
?
1
1
1
1
PA8
0
0
0
0
?
?
?
1
1
1
1
PA7
0
0
0
0
?
?
?
1
1
1
1
PA6
0
0
0
0
?
?
?
1
1
1
1
PA5
0
0
0
0
?
?
?
1
1
1
1
PA4
0
0
1
1
?
?
?
0
0
1
1
PA3
0
1
0
1
?
?
?
0
1
0
1
PA2
X
X
X
X
?
?
?
X
X
X
X
PA1
X
X
X
X
?
?
?
X
X
X
X
PA0
X
X
X
X
?
?
?
X
X
X
X
Block
0
1
2
3
?
?
?
252
253
254
255
7
3443D–DFLSH–2/08
相关PDF资料 |
PDF描述 |
|---|---|
| AT45DB041B-CI | IC FLASH 4MBIT 20MHZ 14CBGA |
| AT45DB041B-CC | IC FLASH 4MBIT 20MHZ 14CBGA |
| AT45DB021B-TC | IC FLASH 2MBIT 20MHZ 28TSOP |
| AT45DB021B-SI | IC FLASH 2MBIT 20MHZ 8SOIC |
| AT45DB021B-SC | IC FLASH 2MBIT 20MHZ 8SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT45DB041B-RC-2.5 | 功能描述:IC FLASH 4MBIT 20MHZ 28SOIC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA（7x7） 包装:托盘 |
| AT45DB041B-RI | 功能描述:闪存 4M bit RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT45DB041B-RI-2.5 | 功能描述:IC FLASH 4MBIT 20MHZ 28SOIC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA（7x7） 包装:托盘 |
| AT45DB041B-RU | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:4-megabit 2.5-volt or 2.7-volt DataFlash |
| AT45DB041B-SC | 功能描述:闪存 4MBIT WAFER 7 MIL - 2.7V COM TEMP RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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