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参数资料
| 型号： | AT45DB041B-RU |
| 厂商： | ATMEL CORP |
| 元件分类： | DRAM |
| 英文描述： | 4-megabit 2.5-volt or 2.7-volt DataFlash |
| 中文描述： | 4M X 1 FLASH 2.7V PROM, PDSO28 |
| 封装： | 0.330 INCH, GREEN, PLASTIC, SOIC-28 |
| 文件页数： | 9/35页 |
| 文件大小： | 321K |
| 代理商： | AT45DB041B-RU |
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9
3443C–DFLSH–5/05
AT45DB041B
take place in a maximum time of t
EP
. During this time, the status register will indicate that the
part is busy.
If a sector is programmed or reprogrammed sequentially page-by-page, then the programming
algorithm shown in
Figure 17-1
on
page 27
is recommended. Otherwise, if multiple bytes in a
page or several pages are programmed randomly in a sector, then the programming algorithm
shown in
Figure 17-2
on
page 28
is recommended. Each page within a sector must be
updated/rewritten at least once within every 10,000 cumulative page erase/program operations
in that sector.
5.4
Operation Mode Summary
The modes described can be separated into two groups – modes which make use of the Flash
memory array (Group A) and modes which do not make use of the Flash memory array (Group
B).
Group A modes consist of:
1.
2.
3.
4.
5.
6.
7.
8.
9.
Main Memory Page Read
Main Memory Page to Buffer 1 (or 2) Transfer
Main Memory Page to Buffer 1 (or 2) Compare
Buffer 1 (or 2) to Main Memory Page Program with Built-in Erase
Buffer 1 (or 2) to Main Memory Page Program without Built-in Erase
Page Erase
Block Erase
Main Memory Page Program through Buffer
Auto Page Rewrite
Group B modes consist of:
1.
2.
3.
Buffer 1 (or 2) Read
Buffer 1 (or 2) Write
Status Register Read
If a Group A mode is in progress (not fully completed) then another mode in Group A should not
be started. However, during this time in which a Group A mode is in progress, modes in Group B
can be started.
This gives the Serial DataFlash the ability to virtually accommodate a continuous data stream.
While data is being programmed into main memory from buffer 1, data can be loaded into buffer
2 (or vice versa). See application note AN-4 (“Using Atmel’s Serial DataFlash”) for more details.
相关PDF资料 |
PDF描述 |
|---|---|
| AT45DB041B-SU | 4-megabit 2.5-volt or 2.7-volt DataFlash |
| AT45DB041B-TU | 4-megabit 2.5-volt or 2.7-volt DataFlash |
| AT45DB041B-SC | 4-megabit 2.5-volt Only or 2.7-volt Only DataFlash |
| AT45DB041B-SC-2.5 | 4-megabit 2.5-volt Only or 2.7-volt Only DataFlash |
| AT45DB041B-SI | 4-megabit 2.5-volt Only or 2.7-volt Only DataFlash |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT45DB041B-SC | 功能描述:闪存 4MBIT WAFER 7 MIL - 2.7V COM TEMP RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT45DB041B-SC-2.5 | 功能描述:闪存 4M bit RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT45DB041B-SI | 功能描述:闪存 4MB WAFER 7 MIL - 2.7V IND TEMP RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT45DB041B-SI-2.5 | 功能描述:闪存 4MB WAFER 7 MIL - 2.5V IND TEMP RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT45DB041B-SU | 功能描述:闪存 4MBIT WAFER 7 MIL IND TEMP RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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