参数资料
型号: AT45DB041D_07
厂商: Atmel Corp.
英文描述: 4-megabit 2.5-volt or 2.7-volt DataFlash
中文描述: 4兆位2.5伏或2.7伏的DataFlash
文件页数: 11/53页
文件大小: 1085K
代理商: AT45DB041D_07
11
3595H–DFLASH–03/07
AT45DB041D
7.8
Main Memory Page Program Through Buffer
This operation is a combination of the Buffer Write and Buffer to Main Memory Page Program
with Built-in Erase operations. Data is first clocked into buffer 1 or buffer 2 from the input pin (SI)
and then programmed into a specified page in the main memory. To perform a main memory
page program through buffer for the DataFlash standard page size (264 bytes), a 1-byte opcode,
82H for buffer 1 or 85H for buffer 2, must first be clocked into the device, followed by three
address bytes. The address bytes are comprised of 4 don’t care bits, 11 page address bits,
(PA10 - PA0) that select the page in the main memory where data is to be written, and 9 buffer
address bits (BFA8 - BFA0) that select the first byte in the buffer to be written. To perform a
main memory page program through buffer for the binary page size (256 bytes), the opcode 82H
for buffer 1 or 85H for buffer 2, must be clocked into the device followed by three address bytes
consisting of 5 don’t care bits, 11 page address bits (A18 - A8) that specify the page in the main
memory to be written, and 8 buffer address bits (BFA7 - BFA0) that selects the first byte in the
buffer to be written. After all address bytes are clocked in, the part will take data from the input
pins and store it in the specified data buffer. If the end of the buffer is reached, the device will
wrap around back to the beginning of the buffer. When there is a low-to-high transition on the CS
pin, the part will first erase the selected page in main memory to all 1s and then program the
data stored in the buffer into that memory page. Both the erase and the programming of the
page are internally self-timed and should take place in a maximum time of t
EP
. During this time,
the status register will indicate that the part is busy.
8.
Sector Protection
Two protection methods, hardware and software controlled, are provided for protection against
inadvertent or erroneous program and erase cycles. The software controlled method relies on
the use of software commands to enable and disable sector protection while the hardware con-
trolled method employs the use of the Write Protect (WP) pin. The selection of which sectors
that are to be protected or unprotected against program and erase operations is specified in the
nonvolatile Sector Protection Register. The status of whether or not sector protection has been
enabled or disabled by either the software or the hardware controlled methods can be deter-
mined by checking the Status Register.
相关PDF资料
PDF描述
AT45DB041D-MU 4-megabit 2.5-volt or 2.7-volt DataFlash
AT45DB041D-MU-2.5 4-megabit 2.5-volt or 2.7-volt DataFlash
AT45DB041D-SSU 4-megabit 2.5-volt or 2.7-volt DataFlash
AT45DB041D-SSU-2.5 4-megabit 2.5-volt or 2.7-volt DataFlash
AT45DB041D-SU 4-megabit 2.5-volt or 2.7-volt DataFlash
相关代理商/技术参数
参数描述
AT45DB041D-DWF 制造商:Adesto Technologies Corporation 功能描述:WHOLE WAFER, NO BACKGRIND - Gel-pak, waffle pack, wafer, diced wafer on film
AT45DB041D-MU 功能描述:闪存 4MB SERIAL 2.5V - IND TEMP RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
AT45DB041D-MU-2.5 功能描述:闪存 4MB SERIAL 2.5V - IND TEMP RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
AT45DB041D-MU-2.5-SL383 制造商:Adesto Technologies Corporation 功能描述:8-VDFN (5X6), IND TEMP, 2.5V, T&R - Tape and Reel 制造商:Adesto Technologies Corporation 功能描述:IC FLASH 4MBIT 50MHZ 8VDFN 制造商:Adesto Technologies Corporation 功能描述:Flash 4M, 66MHz 2.5-3.6V DataFlash
AT45DB041D-MUHT-T 制造商:Adesto Technologies Corporation 功能描述:8-UDFN (5X6), EXT TEMP NON-AECQ 2.7V T&R - Tape and Reel