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参数资料
| 型号： | AT45DB081B-RC-2.5 |
| 厂商： | ATMEL CORP |
| 元件分类： | DRAM |
| 英文描述： | SERIAL EEPROM|FLASH|4KX264X8|CMOS|SOP|28PIN|PLASTIC |
| 中文描述： | 1081344 X 8 FLASH 2.7V PROM, PDSO28 |
| 封装： | 0.330 INCH, PLASTIC, SOIC-28 |
| 文件页数： | 2/32页 |
| 文件大小： | 414K |
| 代理商： | AT45DB081B-RC-2.5 |
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2
AT45DB081B
2225C
–
12/01
stream. EEPROM emulation (bit or byte alterability) is easily handled with a self-
contained three step Read-Modify-Write operation. Unlike conventional Flash memories
that are accessed randomly with multiple address lines and a parallel interface, the
DataFlash uses a SPI serial interface to sequentially access its data. DataFlash sup-
ports SPI mode 0 and mode 3. The simple serial interface facilitates hardware layout,
increases system reliability, minimizes switching noise, and reduces package size and
active pin count. The device is optimized for use in many commercial and industrial
applications where high density, low pin count, low voltage, and low power are essential.
The device operates at clock frequencies up to 20 MHz with a typical active read current
consumption of 4 mA.
To allow for simple in-system reprogrammability, the AT45DB081B does not require
high input voltages for programming. The device operates from a single power supply,
2.5V to 3.6V or 2.7V to 3.6V, for both the program and read operations. The
AT45DB081B is enabled through the chip select pin (CS) and accessed via a three-wire
interface consisting of the Serial Input (SI), Serial Output (SO), and the Serial Clock
(SCK).
All programming cycles are self-timed, and no separate erase cycle is required before
programming.
When the device is shipped from Atmel, the most significant page of the memory array
may not be erased. In other words, the contents of the last page may not be filled with
FFH.
Block Diagram
Memory Array
To provide optimal flexibility, the memory array of the AT45DB081B is divided into three
levels of granularity comprising of sectors, blocks, and pages. The Memory Architecture
Diagram illustrates the breakdown of each level and details the number of pages per
sector and block. All program operations to the DataFlash occur on a page-by-page
basis; however, the optional erase operations can be performed at the block or page
level.
FLASH MEMORY ARRAY
PAGE (264 BYTES)
BUFFER 2 (264 BYTES)
BUFFER 1 (264 BYTES)
I/O INTERFACE
SCK
CS
RESET
VCC
GND
RDY/BUSY
WP
SO
SI
相关PDF资料 |
PDF描述 |
|---|---|
| AT45DB081B-TC | SERIAL EEPROM|FLASH|4KX264X8|CMOS|TSSOP|28PIN|PLASTIC |
| AT45DB081B-TC-2.5 | SERIAL EEPROM|FLASH|4KX264X8|CMOS|TSSOP|28PIN|PLASTIC |
| AT45DB081B-TI | SERIAL EEPROM|FLASH|4KX264X8|CMOS|TSSOP|28PIN|PLASTIC |
| AT45DB081D | 8-megabit 2.5-volt or 2.7-volt DataFlash |
| AT45DB081D_07 | 8-megabit 2.5-volt or 2.7-volt DataFlash |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT45DB081B-RI | 功能描述:闪存 DATAFLASH 2M SERIAL 2.7V 2.7V IND TEMP RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT45DB081B-RI-2.5 | 功能描述:闪存 DATAFLASH 2M SERIAL 2.7V 2.5V IND TEMP RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT45DB081B-RU | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:8-megabit 2.5-volt Only or 2.7-volt Only DataFlash |
| AT45DB081B-TC | 功能描述:闪存 8M SERIAL 2.7V - 2.7V COM TEMP RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT45DB081B-TC-2.5 | 功能描述:闪存 8M SERIAL 2.7V - 2.5V IND TEMP RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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